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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Grover Swartzlander
  • Vol. 30, Iss. 3 — Mar. 1, 2013
  • pp: 626–630

Three-dimensional nanofocusing of light through surface plasmon scattering by a lump-like defect in metal/dielectric/metal slot waveguides

Alexander A. Zharov, Nina A. Zharova, Daria A. Smirnova, and Alexander A. Zharov, Jr.  »View Author Affiliations


JOSA B, Vol. 30, Issue 3, pp. 626-630 (2013)
http://dx.doi.org/10.1364/JOSAB.30.000626


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Abstract

We show that scattering of a surface plasmon by lump-like defects on the walls of a metal/dielectric/metal slot waveguide may be accompanied by 3D nanofocusing of light. Such nanofocusing results in the emergence of “hot spots” of nanometer size with a field intensity several orders higher than in the incident plasmon. This effect takes place only if the lump size is smaller than some critical value. We also demonstrate that a so-called plasmonic “black hole” can concentrate electromagnetic energy as well. We believe that the effect of plasmon nanofocusing may be used for plasmonic nanosensing or subwavelength microscopy.

© 2013 Optical Society of America

OCIS Codes
(230.7400) Optical devices : Waveguides, slab
(240.6680) Optics at surfaces : Surface plasmons
(290.5825) Scattering : Scattering theory
(050.6624) Diffraction and gratings : Subwavelength structures

ToC Category:
Optics at Surfaces

History
Original Manuscript: November 29, 2012
Revised Manuscript: January 16, 2013
Manuscript Accepted: January 16, 2013
Published: February 15, 2013

Citation
Alexander A. Zharov, Nina A. Zharova, Daria A. Smirnova, and Alexander A. Zharov, "Three-dimensional nanofocusing of light through surface plasmon scattering by a lump-like defect in metal/dielectric/metal slot waveguides," J. Opt. Soc. Am. B 30, 626-630 (2013)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-30-3-626


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  23. In the calculations, the other set of parameters was used to implement the condition (10): εD=11 (GaAs), aL=15  nm, ν/ω=0.14. For these parameters, the critical value of the radius is Lc=2  μm.

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