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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Vol. 1, Iss. 1 — Mar. 1, 1984
  • pp: 67–72

Scaling rules for multiphoton interband absorption in semiconductors

B. S. Wherrett  »View Author Affiliations

JOSA B, Vol. 1, Issue 1, pp. 67-72 (1984)

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A quasi-dimensional analysis is presented for the N-photon interband absorption coefficients (KN) of direct-gap semiconductors. Regardless of the value of N, we show that K N ( e 2 c ) N N - 1 P 2 N - 3 n N E g 4 N - 5 F N ( N ω E g ) ,where FN varies little over the relevant range of radiation frequencies. The dominant material dependence of KN is through the energy-gap factor; the N-photon coefficient decreases as Eg4N−5.

© 1984 Optical Society of America

B. S. Wherrett, "Scaling rules for multiphoton interband absorption in semiconductors," J. Opt. Soc. Am. B 1, 67-72 (1984)

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  1. A. Miller, A. Johnston, J. Dempsey, J. Smith, C. R. Pidgeon, and G. D. Holah, "Two-photon absorption in InSb and Hg1−xCdxTe," J. Phys. C 12, 4839–4849 (1978). [CrossRef]
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