Interfacial electronic trap lifetimes studied by the photomodulation of second-harmonic generation processes
JOSA B, Vol. 10, Issue 11, pp. 2093-2099 (1993)
http://dx.doi.org/10.1364/JOSAB.10.002093
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Abstract
Second-harmonic generation and linear photomodulation are combined to study free-charge trapping mechanisms at ZnSe-GaAs(001) heterointerfaces. The variation of second-harmonic intensity as a function of charged-trap density at the buried junction is analyzed quantitatively and used with time-dependent measurements to determine interfacial charge-trap lifetimes.
© 1993 Optical Society of America
Citation
M. S. Yeganeh, J. Qi, A. G. Yodh, and M. C.
Tamargo, "Interfacial electronic trap lifetimes studied by the photomodulation of second-harmonic generation processes," J. Opt. Soc. Am. B 10, 2093-2099 (1993)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-10-11-2093
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