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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Vol. 10, Iss. 11 — Nov. 1, 1993
  • pp: 2093–2099

Interfacial electronic trap lifetimes studied by the photomodulation of second-harmonic generation processes

M. S. Yeganeh, J. Qi, A. G. Yodh, and M. C. Tamargo  »View Author Affiliations


JOSA B, Vol. 10, Issue 11, pp. 2093-2099 (1993)
http://dx.doi.org/10.1364/JOSAB.10.002093


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Abstract

Second-harmonic generation and linear photomodulation are combined to study free-charge trapping mechanisms at ZnSe–GaAs(001) heterointerfaces. The variation of second-harmonic intensity as a function of charged-trap density at the buried junction is analyzed quantitatively and used with time-dependent measurements to determine interfacial charge-trap lifetimes.

© 1993 Optical Society of America

History
Original Manuscript: January 5, 1993
Revised Manuscript: May 21, 1993
Published: November 1, 1993

Citation
M. S. Yeganeh, M. C. Tamargo, J. Qi, and A. G. Yodh, "Interfacial electronic trap lifetimes studied by the photomodulation of second-harmonic generation processes," J. Opt. Soc. Am. B 10, 2093-2099 (1993)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-10-11-2093


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References

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