Second-harmonic generation and linear photomodulation are combined to study free-charge trapping mechanisms at ZnSe–GaAs(001) heterointerfaces. The variation of second-harmonic intensity as a function of charged-trap density at the buried junction is analyzed quantitatively and used with time-dependent measurements to determine interfacial charge-trap lifetimes.
© 1993 Optical Society of America
Original Manuscript: January 5, 1993
Revised Manuscript: May 21, 1993
Published: November 1, 1993
M. S. Yeganeh, M. C. Tamargo, J. Qi, and A. G. Yodh, "Interfacial electronic trap lifetimes studied by the photomodulation of second-harmonic generation processes," J. Opt. Soc. Am. B 10, 2093-2099 (1993)