Second-harmonic generation and linear photomodulation are combined to study free-charge trapping mechanisms at ZnSe-GaAs(001) heterointerfaces. The variation of second-harmonic intensity as a function of charged-trap density at the buried junction is analyzed quantitatively and used with time-dependent measurements to determine interfacial charge-trap lifetimes.
© 1993 Optical Society of America
M. S. Yeganeh, J. Qi, A. G. Yodh, and M. C. Tamargo, "Interfacial electronic trap lifetimes studied by the photomodulation of second-harmonic generation processes," J. Opt. Soc. Am. B 10, 2093-2099 (1993)