Second-order susceptibility of Ga_{0.5}In_{0.5}P crystals at 1.5 μm and their feasibility for waveguide quasi-phase matching
JOSA B, Vol. 14, Issue 6, pp. 1428-1436 (1997)
http://dx.doi.org/10.1364/JOSAB.14.001428
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Abstract
The second-order susceptibilities (d_{ij}) of both ordered and disordered Ga_{0.5}In_{0.5}P semiconductor crystal films epitaxially grown on GaAs substrates are analyzed. Quasi-phase matching based on periodic order–disorder regions is proposed, and the analysis shows that three of the four independent coefficients, namely, d_{33}^{′}, d_{31}^{′}, and d_{15}^{′}, but not d_{14}^{′}, can be modulated. Maker-fringe experiments were performed at 1.57 μm to measure these coefficients in the deposited crystals. However, the crystal-film orientation allowed a definitive determination of the d_{14}^{′} coefficient (110 pm/V) only and an upper limit of 60 pm/V for d_{33}^{′}. More-sophisticated experimental techniques are proposed for measuring d_{33}^{′}.
© 1997 Optical Society of America
Citation
Yoshiyasu Ueno, Vincent Ricci, and George I. Stegeman, "Second-order susceptibility of Ga_{0.5}In_{0.5}P crystals at 1.5 μm and their feasibility for waveguide quasi-phase matching," J. Opt. Soc. Am. B 14, 1428-1436 (1997)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-14-6-1428
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References
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