The second-order susceptibilities (d<sub>ij</sub>) of both ordered and disordered Ga<sub>0.5</sub>In<sub>0.5</sub>P semiconductor crystal films epitaxially grown on GaAs substrates are analyzed. Quasi-phase matching based on periodic order–disorder regions is proposed, and the analysis shows that three of the four independent coefficients, namely, d<sub>33</sub><sup>′</sup>, d<sub>31</sub><sup>′</sup>, and d<sub>15</sub><sup>′</sup>, but not d<sub>14</sub><sup>′</sup>, can be modulated. Maker-fringe experiments were performed at 1.57 μm to measure these coefficients in the deposited crystals. However, the crystal-film orientation allowed a definitive determination of the d<sub>14</sub><sup>′</sup> coefficient (110 pm/V) only and an upper limit of 60 pm/V for d<sub>33</sub><sup>′</sup>. More-sophisticated experimental techniques are proposed for measuring d<sub>33</sub><sup>′</sup>.
© 1997 Optical Society of America
Yoshiyasu Ueno, Vincent Ricci, and George I. Stegeman, "Second-order susceptibility of Ga0.5In0.5P crystals at 1.5 μm and their feasibility for waveguide quasi-phase matching," J. Opt. Soc. Am. B 14, 1428-1436 (1997)