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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Vol. 14, Iss. 8 — Aug. 1, 1997
  • pp: 1951–1955

Determination of optical nonlinearities and carrier lifetime in ZnO

X. J. Zhang, W. Ji, and S. H. Tang  »View Author Affiliations

JOSA B, Vol. 14, Issue 8, pp. 1951-1955 (1997)

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Bound-electronic and free-carrier optical nonlinearities and relaxation of two-photon-excited free carriers in ZnO have been investigated by use of a single-beam Z-scan technique at 532 nm. Under pulsed radiation of 25-ps duration, the two-photon absorption coefficient, the bound-electron nonlinear refractive index, and the change in the refractive index due to the two-photon generation of an electron–hole pair are determined to be 4.2±0.9 cm/GW,-(0.9±0.3)×10-14 cm2/W, and -(1.1±0.3)×10-21 cm3, respectively. With these values in the Z scans conducted with 7-ns laser pulses, the carrier recombination time and the free-carrier absorption cross section are extracted as 2.8±0.6 ns and (6.5±0.9)×10-18 cm2, respectively.

© 1997 Optical Society of America

X. J. Zhang, W. Ji, and S. H. Tang, "Determination of optical nonlinearities and carrier lifetime in ZnO," J. Opt. Soc. Am. B 14, 1951-1955 (1997)

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