Analytical description of z-scan on-axis intensity based on the Huygens–Fresnel principle
JOSA B, Vol. 15, Issue 11, pp. 2742-2747 (1998)
http://dx.doi.org/10.1364/JOSAB.15.002742
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Abstract
An analytical expression capable of calculating the on-axis far-field electric field of a Gaussian beam carrying a phase with a Gaussian profile is obtained. This result is based on the Huygens–Fresnel principle and is not limited to small Gaussian phases. The analytical results are particularized to the z-scan case, agreeing with the Gaussian-decomposition results for small phases. For Gaussian phases with amplitude up to π, a small deviation of the constant peak-to-valley distance is found, but a significant displacement of the axis crossing point is predicted. The theoretical expression of the two-color z-scan is also obtained, and it agrees exactly with the expression obtained by the Gaussian-decomposition method, to first-order approximation. Also we apply our result to the case of a thick sample, verifying the range of coincidence between two different formalisms.
© 1998 Optical Society of America
[Optical Society of America ]
OCIS Codes
(140.3460) Lasers and laser optics : Lasers
(190.0190) Nonlinear optics : Nonlinear optics
(190.4420) Nonlinear optics : Nonlinear optics, transverse effects in
(190.5940) Nonlinear optics : Self-action effects
(260.1960) Physical optics : Diffraction theory
(350.5030) Other areas of optics : Phase
Citation
Ricardo Elgul Samad and Nilson Dias Vieira, Jr., "Analytical description of z-scan on-axis intensity based on the Huygens–Fresnel principle," J. Opt. Soc. Am. B 15, 2742-2747 (1998)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-15-11-2742
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