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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Vol. 15, Iss. 4 — Apr. 1, 1998
  • pp: 1305–1308

Luminescence from neodymium-ion-implanted As2S3 waveguides

C. Meneghini, J. F. Viens, A. Villeneuve, É. J. Knystautas, M. A. Duguay, and K. A. Richardson  »View Author Affiliations


JOSA B, Vol. 15, Issue 4, pp. 1305-1308 (1998)
http://dx.doi.org/10.1364/JOSAB.15.001305


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Abstract

The luminescence of a neodymium-doped arsenic trisulfide planar waveguide at 1083 nm is reported. The dopant was introduced into the chalcogenide glass by ion implantation. The dopant distribution following ion implantation was predicted by molecular dynamic simulation and measured by Rutherford backscattering spectrometry. The most efficient pump wavelength was determined to be 818 nm. This observation of luminescence from rare-earth-ion implantation into chalcogenide glass, for the first time to the authors’ knowledge, suggests that this technique can be useful for rare-earth-doped devices.

© 1998 Optical Society of America

OCIS Codes
(140.4480) Lasers and laser optics : Optical amplifiers
(160.2750) Materials : Glass and other amorphous materials
(160.5690) Materials : Rare-earth-doped materials
(230.3120) Optical devices : Integrated optics devices
(300.2530) Spectroscopy : Fluorescence, laser-induced

Citation
C. Meneghini, J. F. Viens, A. Villeneuve, É. J. Knystautas, M. A. Duguay, and K. A. Richardson, "Luminescence from neodymium-ion-implanted As2S3 waveguides," J. Opt. Soc. Am. B 15, 1305-1308 (1998)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-15-4-1305


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