Spatial quantum noise of semiconductor lasers
JOSA B, Vol. 16, Issue 11, pp. 2140-2146 (1999)
http://dx.doi.org/10.1364/JOSAB.16.002140
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Abstract
The transverse distribution of intensity noise in the far field of semiconductor lasers has been experimentally studied. For a single-mode edge-emitting laser, it has been found that a large amount of noise is present in higher-order nonlasing transverse modes parallel to the diode junction. In the case of a spatially multimode vertical-cavity surface-emitting laser, each mode exhibits a large noise, but these noises show strong anticorrelations.
© 1999 Optical Society of America
[Optical Society of America ]
OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.5440) Optical devices : Polarization-selective devices
(250.7260) Optoelectronics : Vertical cavity surface emitting lasers
(270.6570) Quantum optics : Squeezed states
Citation
J.-P. Hermier, A. Bramati, A. Z. Khoury, E. Giacobino, J.-Ph. Poizat, T. J. Chang, and Ph. Grangier, "Spatial quantum noise of semiconductor lasers," J. Opt. Soc. Am. B 16, 2140-2146 (1999)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-16-11-2140
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