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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Vol. 16, Iss. 8 — Aug. 1, 1999
  • pp: 1243–1249

Interband transitions in bismuth germanate crystals grown from the melts of several [Ge]/[Bi] ratios

S. Moorthy Babu, Kenji Kitamura, Shunji Takekawa, Kenji Watanabe, Takashi Shimizu, Hydeo Okushi, and Ivan Biaggio  »View Author Affiliations

JOSA B, Vol. 16, Issue 8, pp. 1243-1249 (1999)

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We investigated bismuth germanate (Bi12GeO20) single crystals grown from melt with several GeO2 mole percentages, 100×[GeO2]/([GeO2]+[Bi2O3])=8, 12, 14.3, 20, 24, as an aid to understanding the stoichiometric dependence of their optical and electrical properties. Although no observable differences in their lattice constants or GeO2 concentrations could be detected, their crystalline properties depended strongly on the melt composition. Their optical absorption increased almost linearly with the increase of bismuth concentration in the melt, and the dark conductivity increased in crystals grown from germanium-rich melts. The crystal grown from the stoichiometric melt with 14.3-mol. % GeO2 exhibited the largest photoconductivity, which was measured optically by grating-decay experiments. The photoconductivity was quenched in crystals grown from bismuth melts that were either richer or poorer than the stoichiometric melt. Photoluminescence emission spectra displayed two broad bands, with maximum intensities at 1.9 eV (intense) and 2.9 eV (very weak) for the crystal grown from the bismuth-rich melt (8-mol. % GeO2). Only one band, at 2.9 eV, was observed for all other crystals. Based on these optical and electrical results, a three-level transition model is suggested to interpret the stoichiometry-dependent transport mechanism.

© 1999 Optical Society of America

OCIS Codes
(050.1950) Diffraction and gratings : Diffraction gratings
(160.2100) Materials : Electro-optical materials
(160.4760) Materials : Optical properties
(160.5140) Materials : Photoconductive materials
(160.5320) Materials : Photorefractive materials

S. Moorthy Babu, Kenji Kitamura, Shunji Takekawa, Kenji Watanabe, Takashi Shimizu, Hydeo Okushi, and Ivan Biaggio, "Interband transitions in bismuth germanate crystals grown from the melts of several [Ge/Bi] ratios," J. Opt. Soc. Am. B 16, 1243-1249 (1999)

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  1. P. Gunther and J. P. Huignard, eds., Photorefractive Materials and Their Applications (Springer-Verlag, Berlin, 1988), Vols. I and II.
  2. E. Ochoa, L. Hesselink, and J. W. Goodman, “Real time intensity inversion using two-wave and four-wave mixing in photorefractive Bi12GeO20,” Appl. Opt. 24, 1826–1832 (1985). [CrossRef]
  3. L. Solymer, D. J. Webb, and A. Grunnet-Jepsen, eds., The Physics and Applications of Photorefractive Materials (Oxford U. Press, New York, 1996).
  4. M. H. Garrett, “Properties of photorefractive nonstoichiometric bismuth silicon oxide, BixSiO1.5x+2,” J. Opt. Soc. Am. B 8, 78–87 (1991). [CrossRef]
  5. F. P. Strohkendl, P. Tayebati, and R. W. Hellwarth, “Comparative study of photorefractive Bi12SiO20 crystals,” J. Appl. Phys. 66, 6024–6029 (1989). [CrossRef]
  6. J. P. Herriau, D. Rojas, J. P. Huignard, J. M. Bassat, and J. C. Launay, “Highly efficient diffraction in photorefractive BSO–BGO crystals at large applied fields,” Ferroelectrics 75, 271–279 (1987). [CrossRef]
  7. J. Larkin, M. Harris, J. E. Cormier, and A. Armington, “Hydrothermal growth of bismuth silicate (BSO),” J. Cryst. Growth 128, 871–875 (1993). [CrossRef]
  8. S. L. Hou, R. B. Lauer, and R. E. Aldrich, “Transport processes of photoinduced carriers in Bi12SiO20,” J. Appl. Phys. 44, 2652–2658 (1973). [CrossRef]
  9. B. C. Grabmaier and R. Oberschmid, “Properties of pure and doped Bi12GeO20 and Bi12SiO20 crystals,” Phys. Status Solidi A 96, 199–210 (1986). [CrossRef]
  10. R. Oberschmid, “Conductivity instabilities and polarization effects of Bi12(Ge, Si)O20 single-crystal samples,” Phys. Status Solidi A 89, 657–671 (1985). [CrossRef]
  11. R. Oberschmid, “Absorption centers of Bi12GeO20 and Bi12SiO20,” Phys. Status Solidi A 89, 263–270 (1985). [CrossRef]
  12. D. Nesheva, Z. Aneva, and Z. Levi, “Bi12SiO20 monocrystals doped with transition metals,” J. Phys. Chem. Solids 56, 241–250 (1995). [CrossRef]
  13. T. V. Panchenko, V. Kh. Kostyuk, and S. Yu. Kopylova, “Local centers in nonstoichiometric Bi12SiO20 crystals,” Phys. Solid State 38, 84–89 (1996).
  14. P. Tissot and H. Lartigue, “Study of the system GeO2-Bi2O3,” Thermochim. Acta 127, 377–383 (1988). [CrossRef]
  15. P. Tayebati, “The effect of shallow traps on the dark storage of photorefractive grating in Bi12SiO20,” J. Appl. Phys. 70, 4082–4094 (1991). [CrossRef]
  16. P. Nouchi, J. P. Partanen, and R. W. Hellwarth, “Temperature dependence of the electron mobility in photorefractive Bi12SiO20,” J. Opt. Soc. Am. B 9, 1428–1431 (1992). [CrossRef]
  17. I. Biaggio, R. W. Hellwarth, and J. P. Partanen, “Band mobility of photoexcited electrons in Bi12SiO20,” Phys. Rev. Lett. 78, 891–894 (1997). [CrossRef]
  18. P. Bernasconi, I. Biaggio, M. Zgonik, and P. Gunter, “Anisotropy of the electron and drift mobility in KNbO3 and BaTiO3,” Phys. Rev. Lett. 78, 106–109 (1997). [CrossRef]
  19. V. P. Avramenko, L. P. Klimenko, A. Yu. Kudzin, and G. Kh. Sokolyanskii, “Hopping conduction in bismuth germanate single crystals,” Sov. Phys. Solid State 19, 702–703 (1977).
  20. B. Kh. Kostyuk, A. Yu. Kudzin, and G. Kh. Sokolyanskii, “Phototransport in Bi12SiO20 and Bi12GeO20 single crystals,” Sov. Phys. Solid State 22, 1429–1432 (1980).
  21. V. P. Zenchenko and E. P. Sinyavskii, “Influence of impurities on the interband absorption of long-wave radiation in semiconductors,” Sov. Phys. Solid State 22, 2168–2169 (1980).
  22. R. B. Lauer, “Electron effective mass and conduction band effective density of states in Bi12SiO20,” J. Appl. Phys. 45, 1794–1797 (1974). [CrossRef]
  23. R. B. Lauer, “Photoluminescence in Bi12SiO20 and Bi12GeO20,” Appl. Phys. Lett. 17, 178–179 (1970). [CrossRef]
  24. R. B. Lauer, “Thermally stimulated currents and luminescence in Bi12SiO20 and Bi12GeO20,” J. Appl. Phys. 42, 2147–2149 (1971). [CrossRef]
  25. R. Moncourge, B. Jacquier, and G. Boulon, “Temperature dependent luminescence of Bi4Ge3O12. Discussion on possible models,” J. Lumin. 14, 337–348 (1976).
  26. M. J. Weber and R. R. Monchamp, “Luminescence of Bi4Ge3O12: spectral and decay properties,” J. Appl. Phys. 44, 5495–5499 (1973). [CrossRef]
  27. Sh. M. Effendiev, V. G. Darvishov, E. R. Mustafaev, and V. E. Bagiev, “Radiative transitions in crystals of sillenite-type structure,” Phys. Status Solidi A 143, 413–421 (1994). [CrossRef]
  28. N. Maffei, D. H. H. Quon, J. Aota, T. T. Chen, J. McCaffrey, and S. Charbonneau, “Characterization of Bi12GeO20 processed in a microgravity environment,” J. Cryst. Growth 181, 382–389 (1997). [CrossRef]

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