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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Vol. 16, Iss. 8 — Aug. 1, 1999
  • pp: 1286–1291

Linear and nonlinear properties of laser-ablated Si films in the 9.09.6-μm wavelength region

S. Vijayalakshmi, J. Sturmann, and H. Grebel  »View Author Affiliations


JOSA B, Vol. 16, Issue 8, pp. 1286-1291 (1999)
http://dx.doi.org/10.1364/JOSAB.16.001286


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Abstract

The linear and nonlinear properties of Si thin films upon Si wafers made by the use of laser ablation are presented. The linear absorption of the films clearly showed a peak at 9.8 μm (1020 cm−1), whereas the peak at 9.04 μm (1070 cm−1) from the asymmetric Si—O—Si vibration mode was absent. Raman spectroscopy data show a typical 4-cm−1 downshift with respect to the Si line. The nonlinear measurements were performed with a tunable free-electron laser. The nonlinear absorption at λ=9.2 μm was measured to be approximately 2, 25, and 5 times larger than the nonlinear absorption at λ=9.0 μm, λ=9.4 μm, and λ= 9.6 μm, respectively.

© 1999 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(190.0190) Nonlinear optics : Nonlinear optics
(240.0240) Optics at surfaces : Optics at surfaces
(300.0300) Spectroscopy : Spectroscopy
(310.0310) Thin films : Thin films

Citation
S. Vijayalakshmi, J. Sturmann, and H. Grebel, "Linear and nonlinear properties of laser-ablated Si films in the 9.09.6-μm wavelength region," J. Opt. Soc. Am. B 16, 1286-1291 (1999)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-16-8-1286


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