Optical recording of reversed domains in a Ce-doped SBN:75 crystal for bit-oriented three-dimensional optical memory
JOSA B, Vol. 17, Issue 3, pp. 422-426 (2000)
http://dx.doi.org/10.1364/JOSAB.17.000422
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Abstract
We developed a bit-oriented three-dimensional recording with a Ce-doped Sr0.75Ba0.25Nb2O6 (SBN:75) crystal. The ferroelectric polarization was reversed by a focused laser beam in a crystal with a temperature of 38 °C to form bit data. The recorded domain was stable at 15 °C. The data were read as the refractive-index change induced by spontaneous polarization through the Pockels effect. We wrote a single datum in SBN:75 crystal with ferroelectric-domain reversal and observed the domain image with a phase-contrast microscope. Numerical calculations to estimate the domain image were also performed. The observed results were in good agreement with the numerical expectations.
© 2000 Optical Society of America
[Optical Society of America ]
OCIS Codes
(160.2260) Materials : Ferroelectrics
(160.5320) Materials : Photorefractive materials
(190.5330) Nonlinear optics : Photorefractive optics
(210.4680) Optical data storage : Optical memories
(210.4770) Optical data storage : Optical recording
(210.4810) Optical data storage : Optical storage-recording materials
Citation
M. Hisaka, H. Ishitobi, and S. Kawata, "Optical recording of reversed domains in a Ce-doped SBN:75 crystal for bit-oriented three-dimensional optical memory," J. Opt. Soc. Am. B 17, 422-426 (2000)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-17-3-422
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