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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Vol. 17, Iss. 7 — Jul. 1, 2000
  • pp: 1257–1262

Squeezing of photon-number fluctuations in the frequency range wider than 300 MHz in light-emitting diodes at room temperature

Masahide Kobayashi, Yutaka Kadoya, Hiroyuki Yuji, Ryuji Masuyama, and Masamichi Yamanishi  »View Author Affiliations

JOSA B, Vol. 17, Issue 7, pp. 1257-1262 (2000)

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We present the experimental results on the squeezing of photon-number fluctuations in tailor-made light-emitting diodes (LED’s). In the LED, a highly p-doped separate confinement heterostructure is adopted as the active region to shorten the radiative recombination lifetime. In addition, a photodiode is monolithically integrated with the LED to enhance the photon-collection efficiency, which allows strong squeezing. The squeezing below the standard quantum-limit level over a wide frequency range, near-dc to 300 MHz, at room temperature and the maximum squeezing depths, 0.86 dB at room temperature and 2.6 dB at low temperature, are demonstrated.

© 2000 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(270.0270) Quantum optics : Quantum optics
(270.5290) Quantum optics : Photon statistics
(270.6570) Quantum optics : Squeezed states

Masahide Kobayashi, Yutaka Kadoya, Hiroyuki Yuji, Ryuji Masuyama, and Masamichi Yamanishi, "Squeezing of photon-number fluctuations in the frequency range wider than 300 MHz in light-emitting diodes at room temperature," J. Opt. Soc. Am. B 17, 1257-1262 (2000)

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  14. Another approach may be to use a vertical-cavity surface-emitting laser (VCSEL). Recently, the photon-number squeezing has been demonstrated with VCSEL’s driven at injection currents in the mA range. [D. C. Kliper, P. A. Roos, J. L. Carlsten, and K. L. Lear, “Squeezed light generated by a microcavity laser,” Phys. Rev. A 55, R3323–R3326 (1997); D. Wiedenmann, P. Schnitzer, C. Jung, M. Grabhen, R. Jäger, R. Michalzik, and K. J. Ebeling, “Noise characteristics of 850 nm single-mode vertical cavity surface emitting lasers,” Appl. Phys. Lett. 73, 717–719 (1998).] However, to achieve the squeezing at lower injection levels, further reduction of the threshold current for the lasing is necessary, because, generally in LD’s, the sub-Poissonian lights are obtained only when the injection level is sufficiently higher than the threshold for the lasing. [CrossRef]
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  22. In the absence of the backward-pump process, which means that the backward electron flow from p-type active to n-type wideband-gap regions, the spectral Fano factor of detected photon-number is described by the product of two Lorentzians relevant to the pump and recombination processes as discussed in detail in Ref. 17. In the present LED, the backward-pump process may be ignored, since the conduction band offset in the p-n heterojunction, ΔEC~ 220 meV is sufficiently larger than the thermal energy, ≃26 meV.
  23. For instance, H. C. Casey, Jr., and M. B. Panish, Heterostructure Lasers (Academic, New York, 1978), Part A, Chap. 3, p. 161.

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