Passively Q-switched microchip laser at 1.5 μm
JOSA B, Vol. 18, Issue 12, pp. 1805-1812 (2001)
http://dx.doi.org/10.1364/JOSAB.18.001805
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Abstract
We demonstrate a compact laser source in the eye-safe wavelength regime (≈1.5 μm) that produces peak powers up to 10.6 kW at pulse durations of 0.84 ns with a repetition rate exceeding 1 kHz. An Er:Yb:glass microchip laser was passively Q-switched with a semiconductor saturable absorber mirror (SESAM). We investigated SESAM damage under Q-switching conditions and developed an improved SESAM design that can withstand microjoule pulses.
© 2001 Optical Society of America
[Optical Society of America ]
OCIS Codes
(140.3330) Lasers and laser optics : Laser damage
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3500) Lasers and laser optics : Lasers, erbium
(140.3540) Lasers and laser optics : Lasers, Q-switched
(140.3580) Lasers and laser optics : Lasers, solid-state
(230.4320) Optical devices : Nonlinear optical devices
Citation
R. Häring, R. Paschotta, R. Fluck, E. Gini, H. Melchior, and U. Keller, "Passively Q-switched microchip laser at 1.5 μm," J. Opt. Soc. Am. B 18, 1805-1812 (2001)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-18-12-1805
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