Time-resolved THz spectroscopy of proton-bombarded InP
JOSA B, Vol. 18, Issue 9, pp. 1369-1371 (2001)
http://dx.doi.org/10.1364/JOSAB.18.001369
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Abstract
We investigate the recombination dynamics of photoexcited carriers in proton-bombarded InP crystals using near-infrared pump–THz-probe spectroscopy. The carrier lifetime is directly related to the proton dose and hence to the induced trap density: In weakly damaged samples we observe a saturation of the trap states for high-excitation densities. For highly damaged samples the time-dependent THz transmission can be explained by taking into account an Auger-assisted trapping process.
© 2001 Optical Society of America
OCIS Codes
(160.6000) Materials : Semiconductor materials
(300.6500) Spectroscopy : Spectroscopy, time-resolved
(320.7100) Ultrafast optics : Ultrafast measurements
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
Citation
C. Messner, H. Kostner, R. A. Höpfel, and K. Unterrainer, "Time-resolved THz spectroscopy of proton-bombarded InP," J. Opt. Soc. Am. B 18, 1369-1371 (2001)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-18-9-1369
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