We investigate the recombination dynamics of photoexcited carriers in proton-bombarded InP crystals using near-infrared pump–THz-probe spectroscopy. The carrier lifetime is directly related to the proton dose and hence to the induced trap density: In weakly damaged samples we observe a saturation of the trap states for high-excitation densities. For highly damaged samples the time-dependent THz transmission can be explained by taking into account an Auger-assisted trapping process.
© 2001 Optical Society of America
(160.6000) Materials : Semiconductor materials
(300.6500) Spectroscopy : Spectroscopy, time-resolved
(320.7100) Ultrafast optics : Ultrafast measurements
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
C. Messner, H. Kostner, R. A. Höpfel, and K. Unterrainer, "Time-resolved THz spectroscopy of proton-bombarded InP," J. Opt. Soc. Am. B 18, 1369-1371 (2001)