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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Vol. 19, Iss. 5 — May. 1, 2002
  • pp: 1039–1044

Near-field effects on the interband-absorption properties of quantum-wire structures

Kyoung-Youm Kim and Byoungho Lee  »View Author Affiliations

JOSA B, Vol. 19, Issue 5, pp. 1039-1044 (2002)

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The change in the interband-absorption properties of a quantum wire due to the optical near field is investigated. Calculation results show that the near field can enhance or reduce the absorption, depending on the geometry of the quantum wire and the incident direction of light.

© 2002 Optical Society of America

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(130.5990) Integrated optics : Semiconductors
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

Kyoung-Youm Kim and Byoungho Lee, "Near-field effects on the interband-absorption properties of quantum-wire structures," J. Opt. Soc. Am. B 19, 1039-1044 (2002)

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  31. The exciton level in the QWR would be much closer to the resonance energy between the ground states of the conduction and heavy-hole bands (ħω00). Then, Eq. (9) reduces to ε(ω)≅εoff+ifexcNexce2/mexc2ωγexc+f00Nhhe2/mhh2ωγ00, and the refractive-index change can be negligible.

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