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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Vol. 19, Iss. 5 — May. 1, 2002
  • pp: 1092–1100

Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements

D. M. Riffe  »View Author Affiliations


JOSA B, Vol. 19, Issue 5, pp. 1092-1100 (2002)
http://dx.doi.org/10.1364/JOSAB.19.001092


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Abstract

The conductivity effective masses of electrons and holes in Si are calculated for carrier temperatures from 1 to 3000 K. The temperature dependence of the electron mass is calculated by use of a phenomenological model of conduction-band nonparabolicity that has been fitted to experimental measurements of the dependence of the electron conductivity effective mass on carrier concentration. The hole mass is investigated by tight-binding calculations of the valence bands, which have been adjusted to match experimental values of the valence-band curvature parameters at the top of the valence band. The calculations are in excellent agreement with femtosecond-laser reflectivity measurements of the change in optical effective mass as hot carriers cool from 1550 to 300 K.

© 2002 Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(320.2250) Ultrafast optics : Femtosecond phenomena
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

Citation
D. M. Riffe, "Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements," J. Opt. Soc. Am. B 19, 1092-1100 (2002)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-19-5-1092

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