The conductivity effective masses of electrons and holes in Si are calculated for carrier temperatures from 1 to 3000 K. The temperature dependence of the electron mass is calculated by use of a phenomenological model of conduction-band nonparabolicity that has been fitted to experimental measurements of the dependence of the electron conductivity effective mass on carrier concentration. The hole mass is investigated by tight-binding calculations of the valence bands, which have been adjusted to match experimental values of the valence-band curvature parameters at the top of the valence band. The calculations are in excellent agreement with femtosecond-laser reflectivity measurements of the change in optical effective mass as hot carriers cool from 1550 to 300 K.
© 2002 Optical Society of America
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(320.2250) Ultrafast optics : Femtosecond phenomena
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
D. M. Riffe, "Temperature dependence of silicon carrier effective masses with application to femtosecond reflectivity measurements," J. Opt. Soc. Am. B 19, 1092-1100 (2002)