A theoretical model of continuous-wave Yb<sup>3+</sup>-doped microchip lasers based on a quasi-four-level system is proposed, and it is applied to the Yb:YAG microchip laser. The theoretical results of calculations are in agreement with those of experiments. Several ways to improve the properties of Yb<sup>3+</sup>-doped microchip lasers are described. This model is applicable not only to Yb<sup>3+</sup>-doped microchip lasers but also to other quasi-four-level microchip lasers.
© 2003 Optical Society of America
(140.3580) Lasers and laser optics : Lasers, solid-state
(140.5680) Lasers and laser optics : Rare earth and transition metal solid-state lasers
(160.3380) Materials : Laser materials
(160.5690) Materials : Rare-earth-doped materials
Zhiyun Huang, Yidong Huang, Miaoliang Huang, and Zundu Luo, "Optimizing the doping concentration and the crystal thickness in Yb3+-doped microchip lasers," J. Opt. Soc. Am. B 20, 2061-2067 (2003)