Optimizing the doping concentration and the crystal thickness in Yb3+-doped microchip lasers
JOSA B, Vol. 20, Issue 10, pp. 2061-2067 (2003)
http://dx.doi.org/10.1364/JOSAB.20.002061
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Abstract
A theoretical model of continuous-wave Yb3+-doped microchip lasers based on a quasi-four-level system is proposed, and it is applied to the Yb:YAG microchip laser. The theoretical results of calculations are in agreement with those of experiments. Several ways to improve the properties of Yb3+-doped microchip lasers are described. This model is applicable not only to Yb3+-doped microchip lasers but also to other quasi-four-level microchip lasers.
© 2003 Optical Society of America
OCIS Codes
(140.3580) Lasers and laser optics : Lasers, solid-state
(140.5680) Lasers and laser optics : Rare earth and transition metal solid-state lasers
(160.3380) Materials : Laser materials
(160.5690) Materials : Rare-earth-doped materials
Citation
Zhiyun Huang, Yidong Huang, Miaoliang Huang, and Zundu Luo, "Optimizing the doping concentration and the crystal thickness in Yb3+-doped microchip lasers," J. Opt. Soc. Am. B 20, 2061-2067 (2003)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-20-10-2061
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