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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Vol. 21, Iss. 11 — Nov. 1, 2004
  • pp: 2017–2024

Theoretical study on ultrafast 12 all-optical switches with GaN/AlN intersubband optical amplifiers

Nobuo Suzuki  »View Author Affiliations

JOSA B, Vol. 21, Issue 11, pp. 2017-2024 (2004)

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A novel Mach–Zehnder interferometer all-optical 1×2 switch with cross-phase modulation in optically pumped GaN/AlN intersubband optical amplifiers (ISOAs) has been proposed, and the feasibility has been theoretically investigated by a one-dimensional finite-difference time-domain model. The intensity modulation due to gain saturation, which degrades the extinction ratio, is canceled by saturation of excited-state absorption in the ISOA or saturable absorption in the integrated absorption region. Pattern effect-free 1×2 and 2×2 switching operation at 640 Gbits/s has been predicted. The extinction ratio has been calculated to be greater than 16 dB at a control pulse energy of 1 pJ.

© 2004 Optical Society of America

OCIS Codes
(060.1810) Fiber optics and optical communications : Buffers, couplers, routers, switches, and multiplexers
(230.1150) Optical devices : All-optical devices
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5980) Optoelectronics : Semiconductor optical amplifiers
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

Nobuo Suzuki, "Theoretical study on ultrafast 12 all-optical switches with GaN/AlN intersubband optical amplifiers," J. Opt. Soc. Am. B 21, 2017-2024 (2004)

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  13. N. Suzuki and N. Iizuka, “Electron scattering rates in AlGaN/GaN quantum wells for 1.55-μm inter-subband transition,” Jpn. J. Appl. Phys. 37, L369–L371 (1998).
  14. J. D. Heber, C. Gmachl, H. M. Ng, and A. Y. Cho, “Comparative study of ultrafast intersubband electron scattering times at ~1.55 μm wavelength in GaN/AlGaN heterostructures,” Appl. Phys. Lett. 81, 1237–1239 (2002).
  15. J. Hamazaki, S. Matsui, H. Kunugita, K. Ema, H. Kanazawa, T. Tachibana, A. Kikuchi, and K. Kishino, “Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells,” Appl. Phys. Lett. 84, 1102–1104 (2004).
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  18. F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B 56, R10024–R10027 (1997).
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  22. N. Suzuki, “Simulation of interferometer-type ultrafast all-optical gate switches based on intersubband transition in GaN/AlGaN multiple quantum wells,” IEICE Trans. Electron. E85-C, 174–180 (2002).
  23. N. Suzuki, “Simulation of ultrafast cross-gain modulation in optically-pumped GaN/AlN intersubband optical amplifiers,” Jpn. J. Appl. Phys. 42, 5607–5612 (2003).
  24. N. Suzuki, “Theoretical study on ultrafast Mach-Zehnder interferometer switches utilizing GaN/AlN intersubband optical amplifiers,” presented at the Tenth International Workshop on Femtosecond Technology, Chiba, Japan, 16–17 July, 2003, paper WP-6.
  25. N. Suzuki, “Theoretical study on 1.55-μm ultrafast all-optical 2×2 switches based on optically-pumped AlGaN intersubband optical amplifiers,” presented at the Seventh International Conference on Intersubband Transitions in Quantum Wells, Evolène, Switzerland, 1–5 September 2003, paper R8.
  26. N. Suzuki, N. Iizuka, and K. Kaneko, “FDTD simulation of femtosecond optical gating in nonlinear optical waveguide utilizing intersubband transition in AlGaN/GaN quantum wells,” IEICE Trans. Electron. E83-C, 981–988 (2000).
  27. N. Iizuka, K. Kaneko, N. Suzuki, T. Asano, S. Noda, and O. Wada, “Ultrafast intersubband relaxation (≤150 fs) in AlGaN/GaN multiple quantum wells,” Appl. Phys. Lett. 77, 648–650 (2000).
  28. S. T. Sheppard, R. P. Smith, W. L. Pribble, Z. Ring, T. Smith, S. T. Allen, J. Milligan, and J. W. Palmour, “High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating SiC substrates,” presented at the 60th Device Research Conference, Santa Barbara, Calif., 24–26 June, 2002, paper VII. A-1.
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  30. M. Kuball, J. M. Hayes, M. J. Uren, T. Martin, J. C. H. Birbeck, R. S. Balmer, and B. T. Hughes, “Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy,” IEEE Electron Device Lett. 23, 7–9 (2002).
  31. D. Bimberg and N. Ledentsov, “Quantum dots: lasers and amplifiers,” J. Phys.: Condens. Matter 15, R1063–R1076 (2003).

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