Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon
JOSA B, Vol. 21, Issue 7, pp. 1379-1386 (2004)
http://dx.doi.org/10.1364/JOSAB.21.001379
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Abstract
The far-infrared absorption and index of refraction of high-resistivity, float-zone, crystalline silicon has been measured by terahertz time-domain spectroscopy. The measured new upper limit for the absorption of this most transparent dielectric material in the far infrared shows unprecedented transparency over the range from 0.5 to 2.5 THz and a well-resolved absorption feature at 3.6 THz. The index of refraction shows remarkably little dispersion, changing by only 0.0001 over the range from 0.5 to 4.5 THz.
© 2004 Optical Society of America
OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(300.0300) Spectroscopy : Spectroscopy
(300.6270) Spectroscopy : Spectroscopy, far infrared
(320.0320) Ultrafast optics : Ultrafast optics
Citation
Jianming Dai, Jiangquan Zhang, Weili Zhang, and D. Grischkowsky, "Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon," J. Opt. Soc. Am. B 21, 1379-1386 (2004)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-21-7-1379
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