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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Vol. 21, Iss. 7 — Jul. 1, 2004
  • pp: 1379–1386

Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon

Jianming Dai, Jiangquan Zhang, Weili Zhang, and D. Grischkowsky  »View Author Affiliations


JOSA B, Vol. 21, Issue 7, pp. 1379-1386 (2004)
http://dx.doi.org/10.1364/JOSAB.21.001379


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Abstract

The far-infrared absorption and index of refraction of high-resistivity, float-zone, crystalline silicon has been measured by terahertz time-domain spectroscopy. The measured new upper limit for the absorption of this most transparent dielectric material in the far infrared shows unprecedented transparency over the range from 0.5 to 2.5 THz and a well-resolved absorption feature at 3.6 THz. The index of refraction shows remarkably little dispersion, changing by only 0.0001 over the range from 0.5 to 4.5 THz.

© 2004 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(300.0300) Spectroscopy : Spectroscopy
(300.6270) Spectroscopy : Spectroscopy, far infrared
(320.0320) Ultrafast optics : Ultrafast optics

Citation
Jianming Dai, Jiangquan Zhang, Weili Zhang, and D. Grischkowsky, "Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon," J. Opt. Soc. Am. B 21, 1379-1386 (2004)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-21-7-1379


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References

  1. C. M. Randall and R. D. Rawcliffe, “Refractive indices of germanium, silicon, and fused quartz in the far-infrared,” Appl. Opt. 6, 1889–1894 (1967).
  2. E. V. Loewenstein, D. R. Smith, and R. L. Morgan, “Optical constants of far infrared materials. Crystalline solids,” Appl. Opt. 12, 398–406 (1973).
  3. W. R. Passchier, D. D. Honijk, M. Mandel, and M. N. Afsar, “A new method for the determination of complex refractive index spectra of transparent solids in the far-infrared spectral region; results of pure silicon and crystals quartz,” J. Phys. D 10, 509–517 (1977).
  4. J. R. Birch, “The absolute determination of complex reflectivity,” Infrared Phys. 18, 613–620 (1978).
  5. A. K. Wan Abdullah, K. A. Maslin, and T. J. Parker, “Observation of two-phonon difference bands in the FIR transmission spectrum of Si,” Infrared Phys. 24, 185–188 (1984).
  6. M. N. Afsar, “Dielectric measurements of millimeter-wave materials,” IEEE Trans. Microwave Theory Tech. MTT-32, 1598–1609 (1984).
  7. J. M. Dutta, C. R. Jones, and H. Dave, “Complex dielectric constants for selected near-millimeter-wave materials at 245 GHz,” IEEE Trans. Microwave Theory Tech. MTT-34, 932–936 (1986).
  8. T. Ohba and S. Ikawa, “Far-infrared absorption of silicon crystals,” J. Appl. Phys. 64, 4141–4143 (1988).
  9. K. Seeger, “Microwave dielectric constants of silicon, gallium arsenide, and quartz,” J. Appl. Phys. 63, 5439–5443 (1988).
  10. D. Grischkowsky, S. Keiding, M. van Exter, and Ch. Fattinger, “Far-infrared time-domain spectroscopy with terahertz beams of dielectrics and semiconductors,” J. Opt. Soc. Am. B 7, 2006–2015 (1990).
  11. M. van Exter and D. Grischkowsky, “Carrier dynamics of electrons and holes in moderately-doped silicon,” Phys. Rev. B 41, 12140–12149 (1990).
  12. M. N. Asfar and H. Chi, “Millimeter wave complex refractive index, complex dielectric permittivity and loss tangent of extra high purity and compensated silicon,” Int. J. Infrared Millim. Waves 15, 1181–1188 (1994).
  13. Tae-In Jeon and D. Grischkowsky, “Nature of conduction in doped silicon,” Phys. Rev. Lett. 78, 1106–1109 (1997).
  14. Tae-In Jeon and D. Grischkowsky, “Observation of a Cole–Davidson type complex conductivity in the limit of very low carrier densities in doped silicon,” Appl. Phys. Lett. 72, 2259–2261 (1998).
  15. J. Lesurf, Millimeter-Wave Optics, Devices and Systems (Hilger, Bristol, UK, 1990).
  16. M. T. Reiten, S. A. Harmon, and R. A. Cheville, “Terahertz beam propagation measured through three-dimensional amplitude profile determination,” J. Opt. Soc. Am. B 20, 2215–2225 (2003).
  17. L. Duvillaret, F. Garet, and J.-L. Coutaz, “Highly precise determination of optical constants and sample thickness in terahertz time-domain spectroscopy,” Appl. Opt. 38, 409–415 (1999).
  18. S. P. Jamison, R. W. McGowan, and D. Grischkowsky, “Single-mode waveguide propagation and reshaping of sub-ps terahertz pulses in sapphire fibers,” Appl. Phys. Lett. 76, 1987–1989 (2000).
  19. R. Mendis and D. Grischkowsky, “Plastic ribbon THz waveguides,” J. Appl. Phys. 88, 4449–4451 (2000).

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