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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Vol. 22, Iss. 2 — Feb. 1, 2005
  • pp: 362–368

Characterization of carrier-envelope phase-sensitive photocurrent injection in a semiconductor

Peter A. Roos, Xiaoqin Li, Jessica A. Pipis, Tara M. Fortier, Steven T. Cundiff, Ravi D. R. Bhat, and John E. Sipe  »View Author Affiliations


JOSA B, Vol. 22, Issue 2, pp. 362-368 (2005)
http://dx.doi.org/10.1364/JOSAB.22.000362


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Abstract

We characterize the manner in which the carrier-envelope phase of ultrashort pulses can control quantum interference of injected photocurrents in low-temperature-grown gallium arsenide. We verify the predicted linear and square-root dependences of the generated current on the average optical powers of the low (nu) and high (2nu) frequency wings of a pulse spectrum, respectively. When scanning the time delay between these two colors, the signal amplitude exhibits a temporal width of 72 fs. The generated signal behaves as an ideal current source for loads below ∼100 kOmega. This behavior allows us to increase the signal detection bandwidth from 25 kHz with a voltage amplifier to 830 kHz by use of a transimpedance amplifier; higher bandwidths are possible. We discuss how transimpedance amplification could also enable the quantum-interference photocurrent signal to be measured by use of materials with longer carrier lifetimes, such as intrinsic GaAs.

© 2005 Optical Society of America

OCIS Codes
(120.5050) Instrumentation, measurement, and metrology : Phase measurement
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(320.7100) Ultrafast optics : Ultrafast measurements

Citation
Peter A. Roos, Xiaoqin Li, Jessica A. Pipis, Tara M. Fortier, Steven T. Cundiff, Ravi D. R. Bhat, and John E. Sipe, "Characterization of carrier-envelope phase-sensitive photocurrent injection in a semiconductor," J. Opt. Soc. Am. B 22, 362-368 (2005)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-22-2-362

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