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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: G. I. Stegeman
  • Vol. 23, Iss. 10 — Oct. 1, 2006
  • pp: 2089–2096

Ellipsometry of rough CdTe ( 211 ) B Ge ( 211 ) surfaces grown by molecular beam epitaxy

Giacomo Badano, Philippe Ballet, Jean-Paul Zanatta, Xavier Baudry, Alain Million, and James W. Garland  »View Author Affiliations

JOSA B, Vol. 23, Issue 10, pp. 2089-2096 (2006)

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The effect of surface roughness on the ellipsometric response of semiconductor surfaces is investigated. CdTe ( 211 ) B layers were grown on Ge ( 211 ) by molecular beam epitaxy using less than optimal growth conditions to enhance the formation of surface roughness. Their optical properties, measured by rotating-compensator ellipsometry, showed small but significant sample-to-sample differences not explainable in terms of nanometer-scale roughness. A critical-point analysis established that the critical-point structure of the dielectric function was the same for all samples. This result suggested that the observed sample-to-sample variations were due to macroscopic roughness, which scatters off-specular light into the detector, thereby causing errors. We introduced tentative corrections for off-specular reflection that fitted the observed differences and thus supported the idea that off-specular reflection was responsible for the observed differences. These results were obtained using CdTe but are easily extensible to other rough opaque materials.

© 2006 Optical Society of America

OCIS Codes
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(120.6660) Instrumentation, measurement, and metrology : Surface measurements, roughness

ToC Category:

Original Manuscript: March 6, 2006
Manuscript Accepted: April 27, 2006

Giacomo Badano, Philippe Ballet, Jean-Paul Zanatta, Xavier Baudry, Alain Million, and James W. Garland, "Ellipsometry of rough CdTe(211)B-Ge(211) surfaces grown by molecular beam epitaxy," J. Opt. Soc. Am. B 23, 2089-2096 (2006)

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