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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: G. I. Stegeman
  • Vol. 23, Iss. 5 — May. 1, 2006
  • pp: 893–896

Local optical field variation in the neighborhood of a semiconductor micrograting

Wolfgang Bacsa, Benjamin Levine, Michel Caumont, and Benjamin Dwir  »View Author Affiliations

JOSA B, Vol. 23, Issue 5, pp. 893-896 (2006)

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The local optical field of a semiconductor micrograting ( GaAs , 10 × 10 μ m ) is recorded in the middle field region using an optical scanning probe in collection mode at a constant height. The recorded image shows the micrograting with high contrast and a displaced diffraction image. The finite penetration depth of the light leads to a reduced edge resolution in the direction of the illuminating beam while the edge contrast in the perpendicular direction remains high ( 100 nm ) . We use the discrete dipole model to calculate the local optical field to show how the displacement of the diffraction image increases with increasing distance from the surface.

© 2006 Optical Society of America

OCIS Codes
(180.5810) Microscopy : Scanning microscopy
(240.6690) Optics at surfaces : Surface waves
(260.1960) Physical optics : Diffraction theory
(290.1990) Scattering : Diffusion

ToC Category:
Optics at Surfaces

Original Manuscript: August 24, 2005
Manuscript Accepted: November 24, 2005

Wolfgang Bacsa, Benjamin Levine, Michel Caumont, and Benjamin Dwir, "Local optical field variation in the neighborhood of a semiconductor micrograting," J. Opt. Soc. Am. B 23, 893-896 (2006)

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