A method for calculation of near-field images of semiconductor surfaces with an inhomogeneous electron distribution is proposed. The method is based on linear response theory. As a result, the solution of the Lippman–Schwinger equation for a self-consistent field is presented via the effective susceptibility. Near-field images of a modulation-doped n-type GaAs surface subjected to illumination with pulses of a strongly focused laser beam are calculated. The developed approach is universal and applicable for the analysis of experimental data on time-resolved near-field microscopy.
© 2007 Optical Society of America
Original Manuscript: December 22, 2006
Revised Manuscript: February 14, 2007
Manuscript Accepted: February 15, 2007
Published: June 15, 2007
V. Lozovski, V. Vasilenko, G. Tarasov, Yu. Mazur, and G. Salamo, "Near-field imaging of surfaces with Gaussian distribution of carriers," J. Opt. Soc. Am. B 24, 1542-1548 (2007)