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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Henry M. Van Driel
  • Vol. 24, Iss. 7 — Jul. 1, 2007
  • pp: 1542–1548

Near-field imaging of surfaces with Gaussian distribution of carriers

V. Lozovski, V. Vasilenko, G. Tarasov, Yu. Mazur, and G. Salamo  »View Author Affiliations


JOSA B, Vol. 24, Issue 7, pp. 1542-1548 (2007)
http://dx.doi.org/10.1364/JOSAB.24.001542


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Abstract

A method for calculation of near-field images of semiconductor surfaces with an inhomogeneous electron distribution is proposed. The method is based on linear response theory. As a result, the solution of the Lippman–Schwinger equation for a self-consistent field is presented via the effective susceptibility. Near-field images of a modulation-doped n-type GaAs surface subjected to illumination with pulses of a strongly focused laser beam are calculated. The developed approach is universal and applicable for the analysis of experimental data on time-resolved near-field microscopy.

© 2007 Optical Society of America

OCIS Codes
(110.2990) Imaging systems : Image formation theory
(180.5810) Microscopy : Scanning microscopy

ToC Category:
Microscopy

History
Original Manuscript: December 22, 2006
Revised Manuscript: February 14, 2007
Manuscript Accepted: February 15, 2007
Published: June 15, 2007

Citation
V. Lozovski, V. Vasilenko, G. Tarasov, Yu. Mazur, and G. Salamo, "Near-field imaging of surfaces with Gaussian distribution of carriers," J. Opt. Soc. Am. B 24, 1542-1548 (2007)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-24-7-1542

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