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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Henry M. Van Driel
  • Vol. 24, Iss. 8 — Aug. 1, 2007
  • pp: 1862–1866

Diode-pumped waveguide lasers and amplifiers based on highly doped Y 2 SiO 5 : Yb epitaxial layers

F. Thibault  »View Author Affiliations


JOSA B, Vol. 24, Issue 8, pp. 1862-1866 (2007)
http://dx.doi.org/10.1364/JOSAB.24.001862


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Abstract

The realization of diode-pumped waveguide amplifiers and lasers based on highly doped Y 2 SiO 5 : Yb 3 + ( YSO : Yb ) epitaxial layers is reported. An original single-diode-bar face-pumping configuration is used. The propagation losses are, respectively, lower than 0.3 and 0.8 dB cm for 12% and 24% Yb-doped waveguides. The amplifiers provide up to 2.9 dB cm net amplification at 1082 nm , with spatially single-mode output. Monolithic waveguide lasers exhibited 14% slope efficiency, with 340 mW output power at 1082 nm .

© 2007 Optical Society of America

OCIS Codes
(140.3280) Lasers and laser optics : Laser amplifiers
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.5680) Lasers and laser optics : Rare earth and transition metal solid-state lasers
(230.7390) Optical devices : Waveguides, planar

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: January 8, 2007
Revised Manuscript: April 23, 2007
Manuscript Accepted: April 28, 2007
Published: July 19, 2007

Citation
F. Thibault, "Diode-pumped waveguide lasers and amplifiers based on highly doped Y2SiO5:Yb epitaxial layers," J. Opt. Soc. Am. B 24, 1862-1866 (2007)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-24-8-1862

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