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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Henry M. Van Driel
  • Vol. 24, Iss. 8 — Aug. 1, 2007
  • pp: 1862–1866

Diode-pumped waveguide lasers and amplifiers based on highly doped Y 2 SiO 5 : Yb epitaxial layers

F. Thibault  »View Author Affiliations

JOSA B, Vol. 24, Issue 8, pp. 1862-1866 (2007)

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The realization of diode-pumped waveguide amplifiers and lasers based on highly doped Y 2 SiO 5 : Yb 3 + ( YSO : Yb ) epitaxial layers is reported. An original single-diode-bar face-pumping configuration is used. The propagation losses are, respectively, lower than 0.3 and 0.8 dB cm for 12% and 24% Yb-doped waveguides. The amplifiers provide up to 2.9 dB cm net amplification at 1082 nm , with spatially single-mode output. Monolithic waveguide lasers exhibited 14% slope efficiency, with 340 mW output power at 1082 nm .

© 2007 Optical Society of America

OCIS Codes
(140.3280) Lasers and laser optics : Laser amplifiers
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.5680) Lasers and laser optics : Rare earth and transition metal solid-state lasers
(230.7390) Optical devices : Waveguides, planar

ToC Category:
Lasers and Laser Optics

Original Manuscript: January 8, 2007
Revised Manuscript: April 23, 2007
Manuscript Accepted: April 28, 2007
Published: July 19, 2007

F. Thibault, "Diode-pumped waveguide lasers and amplifiers based on highly doped Y2SiO5:Yb epitaxial layers," J. Opt. Soc. Am. B 24, 1862-1866 (2007)

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  1. D. Pelenc, B. Chambaz, I. Chartier, B. Ferrand, C. Wyon, D. P. Shepherd, D. C. Hanna, A. C. Large, and A. C. Tropper, "High slope efficiency and low threshold in a diode-pumped epitaxially grown Yb:YAG waveguide laser," Opt. Commun. 115, 491-497 (1995). [CrossRef]
  2. Y. E. Romanyuk, C. N. Borca, M. Pollnau, S. Rivier, V. Petrov, and U. Griebner, "Yb-doped KY(WO4)2 planar waveguide laser," Opt. Lett. 31, 53-55 (2006). [CrossRef] [PubMed]
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  6. F. Thibault, D. Pelenc, F. Druon, Y. Zaouter, M. Jacquemet, and P. Georges, "Very efficient diode-pumped Yb3+:Y2SiO5 and Yb3+:Lu2SiO5 high-power femtosecond laser operation," Opt. Lett. 31, 1555-1557 (2006). [CrossRef] [PubMed]
  7. F. Thibault, D. Pelenc, B. Chambaz, M. Couchaud, Y. Petit, and B. Viana, "Growth and characterization of Yb3+ doped Y2SiO5 layers on Y2SiO5 substrate for laser applications," Opt. Mater. (to be published).
  8. F. Thibault, Ph.D. dissertation, "Nouvelles structures pour lasers à impulsions brèves de forte puissance: conception et réalisation d'amplificateurs/lasers guides d'onde élaborés par épitaxie en phase liquide et démonstration de lasers femtoseconde en Y2SiO5:Yb et Lu2SiO5:Yb" (Université Paris-Sud XI, 2006).
  9. G. Bourdet, "Theoretical investigation of quasi-three-level longitudinally pumped continuous wave lasers," Appl. Opt. 39, 966-971 (2000). [CrossRef]
  10. Y. B. Choi, S. H. Cho, and D. C. Moon, "Er-Al-codoped silicate planar light waveguide-type amplifier fabricated by radio-frequency sputtering," Opt. Lett. 25, 263-265 (2000). [CrossRef]
  11. I. Chartier, B. Ferrand, D. Pelenc, S. J. Field, D. C. Hanna, A. C. Large, D. P. Shepherd, and A. C. Tropper, "Growth and low-threshold laser oscillation of an epitaxially grown Nd:YAG waveguide," Opt. Lett. 17, 810-812 (1992). [CrossRef] [PubMed]

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