We suggest an efficient mechanism for all-optical switching in one-dimensional photonic heterostructures based on the combined use of two resonant modes that have strong enhancement of their electric fields in the same defect region. By exciting the low-quality resonant mode with the low-intensity pump beam, one can very efficiently shift the spectral position of the high-quality resonant mode and thus control the propagation of a signal beam. For a $\mathrm{Al}\mathrm{Ga}\mathrm{As}∕\mathrm{Si}{\mathrm{O}}_2$ heterostructure with two GaAs defect layers, we numerically demonstrate all-optical switching at a peak pumping intensity lower than $20\mathrm{mW}∕{\mathrm{mm}}^2$ . Moreover, it is of great benefit to practical application that the frequency interval between the two resonant modes is adjustable in a wide range.

© 2007 Optical Society of America

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