Large nonlinear refraction in InSb at 10 μm and the effects of Auger recombination
JOSA B, Vol. 25, Issue 2, pp. 223-235 (2008)
http://dx.doi.org/10.1364/JOSAB.25.000223
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Abstract
Narrow bandgap semiconductors exhibit very large optical nonlinearities in the infrared owing to large two-photon absorption that scales as the inverse cube of the bandgap energy and the large losses and refraction from two-photon generated free carriers. Except for extremely short pulses, the free-carrier effects dominate the nonlinear losses and nonlinear refraction. Here we develop a method for the calculation of the free-electron refraction cross section in InSb. We also calculate the Auger recombination coefficient in InSb and find it to be in good agreement with existing experimental data. In all the calculations we rely on Fermi–Dirac statistics and use a four-band k⋅p theory for band structure calculations. Experiments on the transmission of submicrosecond
© 2008 Optical Society of America
OCIS Codes
(020.4180) Atomic and molecular physics : Multiphoton processes
(190.0190) Nonlinear optics : Nonlinear optics
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
ToC Category:
Nonlinear Optics
History
Original Manuscript: October 15, 2007
Revised Manuscript: December 11, 2007
Manuscript Accepted: December 12, 2007
Published: January 29, 2008
Citation
V. Dubikovskiy, D. J. Hagan, and E. W. Van Stryland, "Large nonlinear refraction in InSb at 10 μm and the effects of Auger recombination," J. Opt. Soc. Am. B 25, 223-235 (2008)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-25-2-223
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