Refractive index, free carrier concentration, and mobility depth profiles of ion implanted Si: optical investigation using FTIR spectroscopy
JOSA B, Vol. 25, Issue 5, pp. 854-864 (2008)
http://dx.doi.org/10.1364/JOSAB.25.000854
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Abstract
Fourier transform infrared (FTIR) spectroscopy combined with a computer code for optical analysis of multilayer structures is implemented in this study as a nondestructive depth profiling tool. High-energy
© 2008 Optical Society of America
OCIS Codes
(080.2720) Geometric optics : Mathematical methods (general)
(160.6000) Materials : Semiconductor materials
(260.2030) Physical optics : Dispersion
(300.6340) Spectroscopy : Spectroscopy, infrared
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(260.2710) Physical optics : Inhomogeneous optical media
ToC Category:
Spectroscopy
History
Original Manuscript: January 18, 2008
Revised Manuscript: March 10, 2008
Manuscript Accepted: March 10, 2008
Published: April 30, 2008
Citation
Charalambos C. Katsidis, "Refractive index, free carrier concentration, and mobility depth profiles of ion implanted Si: optical investigation using FTIR spectroscopy," J. Opt. Soc. Am. B 25, 854-864 (2008)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-25-5-854
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