Controlling the recombination rate of semiconductor active layers via coupling to dispersion-engineered surface plasmons
JOSA B, Vol. 25, Issue 8, pp. 1328-1335 (2008)
http://dx.doi.org/10.1364/JOSAB.25.001328
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Abstract
The coupling between excited electron-hole pairs in semiconductor active layers and surface plasmon polaritons in metallo-dielectric stacks is investigated. These structures can be used to engineer the surface-plasmon dispersion properties so as to introduce tunable singularities in the photonic density of modes, and hence in the recombination rate of nearby active media. A detailed theoretical study of this effect is presented together with the experimental demonstration of geometrically tunable increased recombination in
© 2008 Optical Society of America
OCIS Codes
(240.6680) Optics at surfaces : Surface plasmons
(250.5230) Optoelectronics : Photoluminescence
ToC Category:
Optics at Surfaces
History
Original Manuscript: February 22, 2008
Revised Manuscript: May 5, 2008
Manuscript Accepted: May 6, 2008
Published: July 28, 2008
Citation
John Henson, Anirban Bhattacharyya, Theodore D. Moustakas, and Roberto Paiella, "Controlling the recombination rate of semiconductor active layers via coupling to dispersion-engineered surface plasmons," J. Opt. Soc. Am. B 25, 1328-1335 (2008)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-25-8-1328
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