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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Henry Van Driel
  • Vol. 26, Iss. 11 — Nov. 1, 2009
  • pp: 2176–2180

Theoretical study of a cross-waveguide resonator-based silicon electro-optic modulator with low power consumption

Maoqing Xin, Aaron J. Danner, Ching Eng Png, and Soon Thor Lim  »View Author Affiliations

JOSA B, Vol. 26, Issue 11, pp. 2176-2180 (2009)

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A cross-waveguide resonator structure is proposed for silicon electro-optic modulators operating around the near-infrared (NIR) communication wavelength of 1550 nm . The device is modeled based on a silicon-on-insulator wafer with a compact surface area of 16 μ m 2 ( 4 μ m × 4 μ m ) and the modulation is achieved by resonance peak shift caused by carrier injection-based refractive index perturbation. It is shown via numerical study that the modulation speed of the device hits 2.9 GHz and 3 dB frequency around 4 GHz , while the DC power consumption is only 17.3 mW . An optimum modulation depth of 5.7 dB was found after tuning the optical confinement of the cavity.

© 2009 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(230.2090) Optical devices : Electro-optical devices

ToC Category:
Integrated Optics

Original Manuscript: May 21, 2009
Manuscript Accepted: September 15, 2009
Published: October 27, 2009

Maoqing Xin, Aaron J. Danner, Ching Eng Png, and Soon Thor Lim, "Theoretical study of a cross-waveguide resonator-based silicon electro-optic modulator with low power consumption," J. Opt. Soc. Am. B 26, 2176-2180 (2009)

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