Abstract

A cross-waveguide resonator structure is proposed for silicon electro-optic modulators operating around the near-infrared (NIR) communication wavelength of 1550 nm. The device is modeled based on a silicon-on-insulator wafer with a compact surface area of 16 μm² (4 μm × 4 μm) and the modulation is achieved by resonance peak shift caused by carrier injection-based refractive index perturbation. It is shown via numerical study that the modulation speed of the device hits 2.9 GHz and 3 dB frequency around 4 GHz, while the DC power consumption is only 17.3 mW. An optimum modulation depth of 5.7 dB was found after tuning the optical confinement of the cavity.

© 2009 Optical Society of America

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History
Original Manuscript: May 21, 2009
Manuscript Accepted: September 15, 2009
Published: October 27, 2009

References

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Author Affiliations

Ching Eng Png, Soon Thor Lim

Agency of Science, Technology and Research

Maoqing Xin, Aaron J. Danner

National University of Singapore

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