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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Henry Van Driel
  • Vol. 26, Iss. 3 — Mar. 1, 2009
  • pp: 444–449

Photorefractive waveguides in He + implanted pure and Te-doped Sn 2 P 2 S 6

Roger Mosimann, Flurin Juvalta, Mojca Jazbinsek, Peter Günter, and Alexander A. Grabar  »View Author Affiliations

JOSA B, Vol. 26, Issue 3, pp. 444-449 (2009)

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We have demonstrated for the first time, to the best of our knowledge, photorefractive two-wave mixing in He + implanted waveguides in one of the most promising materials for infrared photorefractive applications, the ferroelectric semiconductor Sn 2 P 2 S 6 . The high optical nonlinearity is preserved after implantation and at the telecommunication wavelength λ = 1.55 μ m , a maximal two-wave mixing gain of 2.5 cm 1 has been measured in Te-doped waveguides. In the nominally pure material an increase of the effective number of traps after implantation has been observed, resulting in an increase of the two-beam coupling gain by a factor of almost 2 in the 633 1064 nm spectral range. In 1% Te-doped Sn 2 P 2 S 6 the effect of ion implantation to the photorefractive response is completely different than in pure materials. While the dominant contribution by holes is not considerably affected, a strong, thermally induced charge compensation is observed in the He + implanted Te-doped waveguides.

© 2009 Optical Society of America

OCIS Codes
(160.5320) Materials : Photorefractive materials
(190.5330) Nonlinear optics : Photorefractive optics
(190.7070) Nonlinear optics : Two-wave mixing
(230.7390) Optical devices : Waveguides, planar

ToC Category:

Original Manuscript: October 31, 2008
Manuscript Accepted: December 1, 2008
Published: February 9, 2009

Roger Mosimann, Flurin Juvalta, Mojca Jazbinsek, Peter Günter, and Alexander A. Grabar, "Photorefractive waveguides in He+ implanted pure and Te-doped Sn2P2S6," J. Opt. Soc. Am. B 26, 444-449 (2009)

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