Optical second-harmonic generation from a silicon-on-insulator wafer has been investigated over a broad spectral region. The nonlinear signal shows oscillations with wavelengths that depend on the angle of incidence. A number of characteristic structures are caused by linear multiple reflections in the layered structure at the fundamental and second-harmonic wavelengths. Furthermore, an interference between signals generated by second-harmonic sources at different interfaces appears. Possibilities for isolating signals from buried interfaces through variations of pump wavelength and angle of incidence are discussed.
© 2009 Optical Society of America
Original Manuscript: January 29, 2009
Revised Manuscript: March 5, 2009
Manuscript Accepted: March 5, 2009
Published: April 3, 2009
Kjeld Pedersen and Thomas Garm Pedersen, "Spectroscopic second-harmonic generation from silicon-on-insulator wafers," J. Opt. Soc. Am. B 26, 917-922 (2009)