Spectroscopic second-harmonic generation from silicon-on-insulator wafers
JOSA B, Vol. 26, Issue 5, pp. 917-922 (2009)
http://dx.doi.org/10.1364/JOSAB.26.000917
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Abstract
Optical second-harmonic generation from a silicon-on-insulator wafer has been investigated over a broad spectral region. The nonlinear signal shows oscillations with wavelengths that depend on the angle of incidence. A number of characteristic structures are caused by linear multiple reflections in the layered structure at the fundamental and second-harmonic wavelengths. Furthermore, an interference between signals generated by second-harmonic sources at different interfaces appears. Possibilities for isolating signals from buried interfaces through variations of pump wavelength and angle of incidence are discussed.
© 2009 Optical Society of America
OCIS Codes
(160.6000) Materials : Semiconductor materials
(190.2620) Nonlinear optics : Harmonic generation and mixing
(240.4350) Optics at surfaces : Nonlinear optics at surfaces
ToC Category:
Nonlinear Optics
History
Original Manuscript: January 29, 2009
Revised Manuscript: March 5, 2009
Manuscript Accepted: March 5, 2009
Published: April 3, 2009
Citation
Kjeld Pedersen and Thomas Garm Pedersen, "Spectroscopic second-harmonic generation from silicon-on-insulator wafers," J. Opt. Soc. Am. B 26, 917-922 (2009)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-26-5-917
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