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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Henry Van Driel
  • Vol. 26, Iss. 5 — May. 1, 2009
  • pp: 998–1001

Enhanced cathodoluminescence from an amorphous AlN:holmium phosphor by co-doped Gd + 3 for optical devices applications

Muhammad Maqbool, Martin E. Kordesch, and A. Kayani  »View Author Affiliations


JOSA B, Vol. 26, Issue 5, pp. 998-1001 (2009)
http://dx.doi.org/10.1364/JOSAB.26.000998


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Abstract

Sputter-deposited thin films of amorphous AlN:Ho ( 1 at. % ) emits in the green ( 549 nm ) region of the visible spectrum under electron excitation. The addition of Gd ( 1 at. % ) in the film enhances the green emission linearly after thermal activation at 900 ° C for 40 min in a nitrogen atmosphere. The luminescence enhancement saturates when the gadolinium concentration reaches four times the holmium concentration. The optical bandgap of amorphous AlN is about 210 nm , so that the film is transparent in the ultraviolet, allowing us to observe the ultraviolet emission at 313 nm from Gd. No significant quenching of the Gd emission is observed. Energy dispersive x-ray (EDX) spectra confirm the increasing concentration of Gd. X-ray diffraction (XRD) analysis shows no peaks other than those arising from the Si (111) substrate, confirming that the films are amorphous. The enhanced luminescence can be used to make high-efficiency optical devices.

© 2009 Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(160.5690) Materials : Rare-earth-doped materials
(230.1150) Optical devices : All-optical devices
(230.3990) Optical devices : Micro-optical devices
(240.6490) Optics at surfaces : Spectroscopy, surface
(160.5293) Materials : Photonic bandgap materials

ToC Category:
Materials

History
Original Manuscript: January 26, 2009
Revised Manuscript: February 25, 2009
Manuscript Accepted: February 25, 2009
Published: April 14, 2009

Citation
Muhammad Maqbool, Martin E. Kordesch, and A. Kayani, "Enhanced cathodoluminescence from an amorphous AlN:holmium phosphor by co-doped Gd+3 for optical devices applications," J. Opt. Soc. Am. B 26, 998-1001 (2009)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-26-5-998


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References

  1. M. Maqbool, H. H. Richardson, P. G. Van Patten, and M. E. Kordesch, “Luminescent holmium doped amorphous AlN thin films for use as waveguides and laser cavities,” in Proceedings of Materials Research Society Symposium Y (MRS, 2003), Vol. 798, paper Y5.8.
  2. M. Maqbool, H. H. Richardson, and M. E. Kordesch, “Cathodoluminescence of praseodymium doped amorphous AlN, GaN and Turbostratic BN,” in Proceedings of Materials Research Society Symposium E (MRS, 2004), Vol. 831, paper E8.12.
  3. H. Chen, K. Gurumurugan, M. E. Kordesch, W. M. Jadwisienczak, and H. J. Lozykowski, “Visible and infrared emission of GaN:Er thin films grown by sputtering,” MRS Internet J. Nitride Semicond. Res. 5, U130-U135, Suppl. 1 (2000).
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  8. M. L. Caldwell, A. L. Martin, C. M. Spalding, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Visible emission from amorphous AlN thin--film phosphors with Cu, Mn, or Cr,” J. Vac. Sci. Technol. A 19, 1894-97 (2001). [CrossRef]
  9. M. L. Caldwell, A. L. Martin, V. I. Dimitrova, P. G. Van Patten, M. E. Kordesch, and H. H. Richardson, “Emission properties of an amorphous AlN:Cr3+ thin-film phosphor,” Appl. Phys. Lett. 78, 1246-1248 (2001). [CrossRef]
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  20. B. M. Walsh, N. P. Barnes, and B. D. Bartolo, “Branching ratios, cross sections, and radiative lifetimes of rare earth ions in solids: Application to Tm3+ and Ho3+ ions in LiYF4,” J. Appl. Phys. 83, 2772-2787 (1998). [CrossRef]
  21. M. Maqbool, “Luminescence from thulium and samarium doped amorphous AlN thin films deposited by RF magnetron sputtering and the effect of thermal activation on luminescence,” Eur. Phys. J.: Appl. Phys. 34, 31-34 (2006). [CrossRef]

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