Noncontact evaluation of nondoped InP wafers by terahertz time-domain spectroscopy
JOSA B, Vol. 26, Issue 9, pp. A1-A5 (2009)
http://dx.doi.org/10.1364/JOSAB.26.0000A1
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Abstract
Terahertz (THz) time-domain spectroscopy is used as a noncontact method to evaluate a nondoped indium phosphide (InP) wafer for the temperature and frequency ranges of
© 2009 Optical Society of America
OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(300.6495) Spectroscopy : Spectroscopy, teraherz
History
Original Manuscript: February 2, 2009
Revised Manuscript: March 19, 2009
Manuscript Accepted: March 20, 2009
Published: April 21, 2009
Citation
Caihong Zhang, Biaobing Jin, Jian Chen, Peiheng Wu, and Masayoshi Tonouchi, "Noncontact evaluation of nondoped InP wafers by terahertz time-domain spectroscopy," J. Opt. Soc. Am. B 26, A1-A5 (2009)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-26-9-A1
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