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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Henry Van Driel
  • Vol. 26, Iss. 9 — Sep. 1, 2009
  • pp: A1–A5

Noncontact evaluation of nondoped InP wafers by terahertz time-domain spectroscopy

Caihong Zhang, Biaobing Jin, Jian Chen, Peiheng Wu, and Masayoshi Tonouchi  »View Author Affiliations

JOSA B, Vol. 26, Issue 9, pp. A1-A5 (2009)

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Terahertz (THz) time-domain spectroscopy is used as a noncontact method to evaluate a nondoped indium phosphide (InP) wafer for the temperature and frequency ranges of 4.2 300 K and 0.2 4 THz , respectively. The strongly temperature- and frequency-dependent optical constants of the complex refractive index and complex conductivity were observed in the THz region, which were fitted and analyzed with a simple Drude model. The temperature dependence of the carrier density and scattering time are also presented. The shallow donors of impurities are discussed with the obtained results.

© 2009 Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(300.6495) Spectroscopy : Spectroscopy, teraherz

Original Manuscript: February 2, 2009
Revised Manuscript: March 19, 2009
Manuscript Accepted: March 20, 2009
Published: April 21, 2009

Caihong Zhang, Biaobing Jin, Jian Chen, Peiheng Wu, and Masayoshi Tonouchi, "Noncontact evaluation of nondoped InP wafers by terahertz time-domain spectroscopy," J. Opt. Soc. Am. B 26, A1-A5 (2009)

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