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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Henry Van Driel
  • Vol. 26, Iss. 9 — Sep. 1, 2009
  • pp: A29–A34

THz-pump/THz-probe spectroscopy of semiconductors at high field strengths [Invited]

Matthias C. Hoffmann, János Hebling, Harold Y. Hwang, Ka-Lo Yeh, and Keith A. Nelson  »View Author Affiliations

JOSA B, Vol. 26, Issue 9, pp. A29-A34 (2009)

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Pumping n-type GaAs and InSb with ultrafast THz pulses having intensities higher than 150 MW cm 2 shows strong free-carrier absorption saturation at temperatures of 300 K and 200 K , respectively. If the energy imparted to the carriers exceeds the bandgap, impact ionization processes can occur. The dynamics of carrier cooling in GaAs and impact ionization in InSb were monitored using THz-pump/THz probe spectroscopy, which provides both sub-bandgap excitation and probing, eliminating any direct optical electron-hole generation that complicates the evaluation of results in optical pump/THz probe experiments.

© 2009 Optical Society of America

OCIS Codes
(190.2620) Nonlinear optics : Harmonic generation and mixing
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(190.7110) Nonlinear optics : Ultrafast nonlinear optics
(260.3090) Physical optics : Infrared, far
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors

Original Manuscript: March 18, 2009
Manuscript Accepted: April 10, 2009
Published: June 1, 2009

Matthias C. Hoffmann, János Hebling, Harold Y. Hwang, Ka-Lo Yeh, and Keith A. Nelson, "THz-pump/THz-probe spectroscopy of semiconductors at high field strengths [Invited]," J. Opt. Soc. Am. B 26, A29-A34 (2009)

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