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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Henry van Driel
  • Vol. 27, Iss. 10 — Oct. 1, 2010
  • pp: 2122–2131

Measurement and modeling of infrared nonlinear absorption coefficients and laser-induced damage thresholds in Ge and GaSb

T. J. Wagner, M. J. Bohn, R. A. Coutu, Jr., L. P. Gonzalez, J. M. Murray, K. L. Schepler, and S. Guha  »View Author Affiliations

JOSA B, Vol. 27, Issue 10, pp. 2122-2131 (2010)

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Using a simultaneous fitting technique to extract nonlinear absorption coefficients from data at two pulse widths, we measure two-photon and free-carrier absorption coefficients for Ge and GaSb at 2.05 and 2.5 μ m for the first time, to our knowledge. Results agreed well with published theory. Single-shot damage thresholds were also measured at 2.5 μ m and agreed well with modeled thresholds using experimentally determined parameters including nonlinear absorption coefficients and temperature dependent linear absorption. The damage threshold for a single-layer Al 2 O 3 anti-reflective coating on Ge was 55% or 35% lower than the uncoated threshold for picosecond or nanosecond pulses, respectively.

© 2010 U.S. Government

OCIS Codes
(140.3330) Lasers and laser optics : Laser damage
(190.0190) Nonlinear optics : Nonlinear optics
(350.1820) Other areas of optics : Damage

ToC Category:
Nonlinear Optics

Original Manuscript: July 20, 2010
Manuscript Accepted: July 28, 2010
Published: September 23, 2010

T. J. Wagner, M. J. Bohn, R. A. Coutu, Jr., L. P. Gonzalez, J. M. Murray, K. L. Schepler, and S. Guha, "Measurement and modeling of infrared nonlinear absorption coefficients and laser-induced damage thresholds in Ge and GaSb," J. Opt. Soc. Am. B 27, 2122-2131 (2010)

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