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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Henry van Driel
  • Vol. 27, Iss. 10 — Oct. 1, 2010
  • pp: 2146–2150

III-V photonic crystal wire cavity laser on silicon wafer

Yacine Halioua, Alexandre Bazin, Paul Monnier, Timothy J. Karle, Isabelle Sagnes, Gunther Roelkens, Dries Van Thourhout, Fabrice Raineri, and Rama Raj  »View Author Affiliations


JOSA B, Vol. 27, Issue 10, pp. 2146-2150 (2010)
http://dx.doi.org/10.1364/JOSAB.27.002146


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Abstract

We report on the modeling and experimental characterization of an InP-based photonic crystal wire cavity laser bonded to a silicon wafer. Simulations give an insight into the variation of the resonant mode frequency and the dependence of the Q-factor on the geometrical parameters of the laser cavity. Calculated and measured Q-factors are of the order of 10 4 . A low threshold laser operation is demonstrated.

© 2010 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(140.3460) Lasers and laser optics : Lasers
(350.4238) Other areas of optics : Nanophotonics and photonic crystals

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: April 26, 2010
Revised Manuscript: August 12, 2010
Manuscript Accepted: August 18, 2010
Published: September 29, 2010

Citation
Yacine Halioua, Alexandre Bazin, Paul Monnier, Timothy J. Karle, Isabelle Sagnes, Gunther Roelkens, Dries Van Thourhout, Fabrice Raineri, and Rama Raj, "III-V photonic crystal wire cavity laser on silicon wafer," J. Opt. Soc. Am. B 27, 2146-2150 (2010)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-27-10-2146


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