First principles derivation of microcavity semiconductor laser threshold condition and its application to FDTD active cavity modeling
JOSA B, Vol. 27, Issue 11, pp. 2262-2272 (2010)
http://dx.doi.org/10.1364/JOSAB.27.002262
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Abstract
A laser threshold condition derived from the instantaneous form of Maxwell’s equations is presented. This derivation incorporates the passive quality factor of the resonator and is particularly amenable to semiconductor microcavity lasers. The optical confinement factor is derived and compared to previous reports. The threshold condition derived here is compared to the results of active cavity finite-difference time-domain calculations, and excellent agreement is found.
© 2010 Optical Society of America
OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.3410) Lasers and laser optics : Laser resonators
(140.3430) Lasers and laser optics : Laser theory
(140.3460) Lasers and laser optics : Lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.3945) Lasers and laser optics : Microcavities
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: June 14, 2010
Revised Manuscript: August 27, 2010
Manuscript Accepted: August 29, 2010
Published: October 13, 2010
Citation
Adam Mock, "First principles derivation of microcavity semiconductor laser threshold condition and its application to FDTD active cavity modeling," J. Opt. Soc. Am. B 27, 2262-2272 (2010)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-27-11-2262
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