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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Henry van Driel
  • Vol. 27, Iss. 11 — Nov. 1, 2010
  • pp: B45–B49

Future of group-III nitride semiconductor green laser diodes [Invited]

Hiroaki Ohta, Steven P. DenBaars, and Shuji Nakamura  »View Author Affiliations


JOSA B, Vol. 27, Issue 11, pp. B45-B49 (2010)
http://dx.doi.org/10.1364/JOSAB.27.000B45


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Abstract

Some research groups have realized green laser diodes (LDs) using InGaN-based nitride semiconductors. However, the performances of their devices, in particular wall-plug efficiency, were still one digit lower than those of established red and blue semiconductor LDs. To achieve high-performance green LDs and apply them to LD displays or micro-projectors, the field should focus on improving the internal quantum efficiency (IQE) of green spontaneous emission from InGaN quantum wells (QWs). Green InGaN QWs have completely different features than blue InGaN QWs in terms of growth and concomitant material quality. The exploration of 100% IQE-quality InGaN materials for green emission continues.

© 2010 Optical Society of America

OCIS Codes
(140.0140) Lasers and laser optics : Lasers and laser optics
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7300) Lasers and laser optics : Visible lasers
(160.6000) Materials : Semiconductor materials
(250.5960) Optoelectronics : Semiconductor lasers

History
Original Manuscript: June 22, 2010
Revised Manuscript: August 10, 2010
Manuscript Accepted: August 24, 2010
Published: October 18, 2010

Citation
Hiroaki Ohta, Steven P. DenBaars, and Shuji Nakamura, "Future of group-III nitride semiconductor green laser diodes [Invited]," J. Opt. Soc. Am. B 27, B45-B49 (2010)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-27-11-B45

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