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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Henry van Driel
  • Vol. 27, Iss. 2 — Feb. 1, 2010
  • pp: 187–196

Gain bandwidth of 80 nm and 2 dB/cm peak gain in Al 2 O 3 : Er 3 + optical amplifiers on silicon

J. D.B. Bradley, L. Agazzi, D. Geskus, F. Ay, K. Wörhoff, and M. Pollnau  »View Author Affiliations

JOSA B, Vol. 27, Issue 2, pp. 187-196 (2010)

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Erbium-doped aluminum oxide integrated optical amplifiers were fabricated on silicon substrates, and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2 × 10 20 cm 3 . Background losses below 0.3 dB cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2 × 10 20 cm 3 , an internal net gain was obtained over a wavelength range of 80 nm ( 1500 1580 nm ) , and a peak gain of 2.0 dB cm was measured at 1533 nm . The broadband and high peak gain are attributed to an optimized fabrication process, improved waveguide design, and pumping at 977 nm as opposed to 1480 nm . In a 5.4 - cm -long amplifier, a total internal net gain of up to 9.3 dB was measured. By use of a rate-equation model, an internal net gain of 33 dB at the 1533 nm gain peak and more than 20 dB for all wavelengths within the telecom C-band ( 1525 1565 nm ) are predicted for a launched signal power of 1 μ W when launching 100 mW of pump power into a 24 - cm -long amplifier. The high optical gain demonstrates that Al 2 O 3 : Er 3 + is a competitive technology for active integrated optics.

© 2010 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.3130) Integrated optics : Integrated optics materials
(140.4480) Lasers and laser optics : Optical amplifiers
(160.5690) Materials : Rare-earth-doped materials

ToC Category:
Integrated Optics

Original Manuscript: March 31, 2009
Revised Manuscript: September 19, 2009
Manuscript Accepted: September 25, 2009
Published: January 7, 2010

J. D. B. Bradley, L. Agazzi, D. Geskus, F. Ay, K. Wörhoff, and M. Pollnau, "Gain bandwidth of 80 nm and 2 dB/cm peak gain in Al2O3:Er3+ optical amplifiers on silicon," J. Opt. Soc. Am. B 27, 187-196 (2010)

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  1. Silicon Photonics: The State of the Art, G.T.Reed, ed. (Wiley, 2008). [CrossRef]
  2. T. Kitagawa, K. Hattori, K. Shuto, M. Yasu, M. Kobayashi, and M. Horiguchi, “Amplification in erbium-doped silica-based planar lightwave circuits,” Electron. Lett. 28, 1818-1819 (1992). [CrossRef]
  3. T. H. Hoekstra, P. V. Lambeck, H. Albers, and Th. J. A. Popma, “Sputter-deposited erbium-doped Y2O3 active optical waveguides,” Electron. Lett. 29, 581-583 (1993). [CrossRef]
  4. R. Brinkmann, I. Baumann, M. Dinand, W. Sohler, and H. Suche, “Erbium-doped single- and double-pass Ti:LiNbO3 waveguide amplifiers,” IEEE J. Quantum Electron. 30, 2356-2360 (1994). [CrossRef]
  5. P. Camy, J. E. Román, F. W. Willems, M. Hempstead, J. C. van der Plaats, C. Prel, A. Béguin, A. M. J. Koonen, J. S. Wilkinson, and C. Lerminiaux, “Ion-exchanged planar lossless splitter at 1.5 μm,” Electron. Lett. 32, 321-322 (1996). [CrossRef]
  6. Y. C. Yan, A. J. Faber, H. de Waal, P. G. Kik, and A. Polman, “Erbium-doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 μm,” Appl. Phys. Lett. 71, 2922-2924 (1997). [CrossRef]
  7. A. Q. Le Quang, R. Hierle, J. Zyss, I. Ledoux, G. Cusmai, R. Costa, A. Barberis, and S. M. Pietralunga, “Demonstration of net gain at 1550 nm in an erbium-doped polymer single-mode rib waveguide,” Appl. Phys. Lett. 89, 141124 (2006). [CrossRef]
  8. A. Kahn, H. Kühn, S. Heinrich, K. Petermann, J. D. B. Bradley, K. Wörhoff, M. Pollnau, Y. Kuzminykh, and G. Huber, “Amplification in epitaxially grown Er:(Gd,Lu)2O3 waveguides for active integrated optical devices,” J. Opt. Soc. Am. B 25, 1850-1853 (2008). [CrossRef]
  9. T. Kitagawa, K. Hattori, M. Shimizu, Y. Ohmori, and M. Kobayashi, “Guided-wave laser based on erbium-doped silica planar lightwave circuit,” Electron. Lett. 27, 334-335 (1991). [CrossRef]
  10. W. Sohler, B. K. Das, D. Dey, S. Reza, H. Suche, and R. Ricken, “Erbium-doped lithium niobate waveguide lasers,” IEICE Trans. Electron. E88-C, 990-997 (2005). [CrossRef]
  11. D. L. Veasey, D. S. Funk, P. M. Peters, N. A. Sanford, G. E. Obarski, N. Fontaine, M. Young, A. P. Peskin, W. C. Liu, S. N. Houde-Walter, and J. S. Hayden, “Yb/Er-codoped and Yb-doped waveguide lasers in phosphate glass,” J. Non-Cryst. Solids 263-264, 369-381 (2000). [CrossRef]
  12. D. Barbier, M. Rattay, F. Saint André, G. Clauss, M. Trouillon, A. Kevorkian, J.-M. P. Delavaux, and E. Murphy, “Amplifying four-wavelength combiner, based on erbium/ytterbium-doped waveguide amplifiers and integrated splitters,” IEEE Photon. Technol. Lett. 9, 315-317 (1997). [CrossRef]
  13. S. Blaize, L. Bastard, C. Cassagnètes, and J. E. Broquin, “Multiwavelengths DFB waveguide laser arrays in Yb-Er codoped phosphate glass substrate,” IEEE Photon. Technol. Lett. 15, 516-518 (2003). [CrossRef]
  14. S. Taccheo, G. Della Valle, R. Osellame, G. Cerullo, N. Chiodo, P. Laporta, O. Svelto, A. Killi, U. Morgner, M. Lederer, and D. Kopf, “Er:Yb-doped waveguide laser fabricated by femtosecond laser pulses,” Opt. Lett. 29, 2626-2628 (2004). [CrossRef] [PubMed]
  15. G. N. van den Hoven, R. J. I. M. Koper, A. Polman, C. van Dam, K. W. M. van Uffelen, and M. K. Smit, “Net optical gain at 1.53 μm in Er-doped Al2O3 waveguides on silicon,” Appl. Phys. Lett. 68, 1886-1888 (1996). [CrossRef]
  16. C. E. Chryssou and C. W. Pitt, “Er -doped Al2O3 thin films by plasma-enhanced chemical vapor deposition (PECVD) exhibiting a 55 nm optical bandwidth,” IEEE J. Quantum Electron. 34, 282-285 (1998). [CrossRef]
  17. G. N. van den Hoven, E. Snoeks, A. Polman, C. van Dam, J. W. M. van Uffelen, and M. K. Smit, “Upconversion in Er-implanted Al2O3 waveguides,” J. Appl. Phys. 79, 1258-1266 (1996). [CrossRef]
  18. K. Wörhoff, J. D. B. Bradley, F. Ay, D. Geskus, T. Blauwendraat, and M. Pollnau, “Reliable low-cost fabrication of low-loss Al2O3:Er3+ waveguides with 5.4 dB optical gain,” IEEE J. Quantum Electron. 45, 454-461 (2009). [CrossRef]
  19. J. D. B. Bradley, F. Ay, K. Wörhoff, and M. Pollnau, “Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching,” Appl. Phys. B: Lasers Opt. 89, 311-318 (2007). [CrossRef]
  20. L. Agazzi, J. D. B. Bradley, F. Ay, A. Kahn, H. Scheife, G. Huber, R. M. de Ridder, K. Wörhoff, and M. Pollnau, “Energy migration governs upconversion losses in Er3+-doped integrated amplifiers,” in CLEO/EUROPE (Optical Society of America, 2009), paper CEI_3.
  21. D. E. McCumber, “Einstein relations connecting broadband emission and absorption spectra,” Phys. Rev. A 136, 954-957 (1964). [CrossRef]
  22. W. J. Miniscalco and R. S. Quimby, “General procedure for the analysis of Er3+ cross sections,” Opt. Lett. 16, 258-260 (1991). [CrossRef] [PubMed]
  23. E. Desurvire and J. R. Simpson, “Evaluation of I15/24 and I13/24 Stark-level energies in erbium-doped aluminosilicate glass fibers,” Opt. Lett. 15, 547-549 (1990). [CrossRef] [PubMed]
  24. G. N. van den Hoven, J. A. van der Elsken, A. Polman, C. van Dam, K. W. M. van Uffelen, and M. K. Smit, “Absorption and emission cross sections of Er3+ in Al2O3 waveguides,” Appl. Opt. 36, 3338-3341 (1997). [CrossRef] [PubMed]
  25. S. F. Li, C. L. Song, Q. J. Xiong, and B. Ran, “A numerical analysis of gain characteristics of Er-doped Al2O3 waveguide amplifiers,” Opt. Quantum Electron. 34, 859-866 (2002). [CrossRef]
  26. S. Musa, H. J. van Weerden, T. H. Yau, and P. V. Lambeck, “Characteristics of Er-doped Al2O3 thin films deposited by reactive co-sputtering,” IEEE J. Quantum Electron. 36, 1089-1097 (2000). [CrossRef]
  27. R. S. Quimby, W. J. Miniscalco, and B. Thompson, “Excited-state absorption at 980 nm in erbium-doped glass,” in Fiber Laser Sources and Amplifiers III, Procc. SPIE 1581, 72-79 (1991).
  28. X. Zou and T. Izumitani, “Spectroscopic properties and mechanisms of excited-state absorption and energy transfer upconversion for Er3+-doped glasses,” J. Non-Cryst. Solids 162, 68-80 (1993). [CrossRef]

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