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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Henry van Driel
  • Vol. 27, Iss. 2 — Feb. 1, 2010
  • pp: 187–196

Gain bandwidth of 80 nm and 2 dB/cm peak gain in Al 2 O 3 : Er 3 + optical amplifiers on silicon

J. D.B. Bradley, L. Agazzi, D. Geskus, F. Ay, K. Wörhoff, and M. Pollnau  »View Author Affiliations


JOSA B, Vol. 27, Issue 2, pp. 187-196 (2010)
http://dx.doi.org/10.1364/JOSAB.27.000187


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Abstract

Erbium-doped aluminum oxide integrated optical amplifiers were fabricated on silicon substrates, and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2 × 10 20 cm 3 . Background losses below 0.3 dB cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2 × 10 20 cm 3 , an internal net gain was obtained over a wavelength range of 80 nm ( 1500 1580 nm ) , and a peak gain of 2.0 dB cm was measured at 1533 nm . The broadband and high peak gain are attributed to an optimized fabrication process, improved waveguide design, and pumping at 977 nm as opposed to 1480 nm . In a 5.4 - cm -long amplifier, a total internal net gain of up to 9.3 dB was measured. By use of a rate-equation model, an internal net gain of 33 dB at the 1533 nm gain peak and more than 20 dB for all wavelengths within the telecom C-band ( 1525 1565 nm ) are predicted for a launched signal power of 1 μ W when launching 100 mW of pump power into a 24 - cm -long amplifier. The high optical gain demonstrates that Al 2 O 3 : Er 3 + is a competitive technology for active integrated optics.

© 2010 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.3130) Integrated optics : Integrated optics materials
(140.4480) Lasers and laser optics : Optical amplifiers
(160.5690) Materials : Rare-earth-doped materials

ToC Category:
Integrated Optics

History
Original Manuscript: March 31, 2009
Revised Manuscript: September 19, 2009
Manuscript Accepted: September 25, 2009
Published: January 7, 2010

Citation
J. D. B. Bradley, L. Agazzi, D. Geskus, F. Ay, K. Wörhoff, and M. Pollnau, "Gain bandwidth of 80 nm and 2 dB/cm peak gain in Al2O3:Er3+ optical amplifiers on silicon," J. Opt. Soc. Am. B 27, 187-196 (2010)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-27-2-187

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