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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Henry van Driel
  • Vol. 27, Iss. 4 — Apr. 1, 2010
  • pp: 730–734

IR permittivities for silicides and doped silicon

J. W. Cleary, R. E. Peale, D. J. Shelton, G. D. Boreman, C. W. Smith, M. Ishigami, R. Soref, A. Drehman, and W. R. Buchwald  »View Author Affiliations

JOSA B, Vol. 27, Issue 4, pp. 730-734 (2010)

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The complex permittivity for Pt, Pd, Ni, and Ti-silicide films as well as heavily doped p- and n-type silicon were determined by ellipsometry over the energy range 0.031 eV to 4.0 eV . Fits to the Drude model gave bulk plasma and relaxation frequencies. Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy, secondary ion mass spectrometry, and four-point probe measurements complemented the optical characterization. Calculations from measured permittivities of waveguide loss and mode confinement suggest that the considered materials are better suited for long-wavelength surface-plasmon-polariton waveguide applications than metal films.

© 2010 Optical Society of America

OCIS Codes
(120.4530) Instrumentation, measurement, and metrology : Optical constants
(160.3130) Materials : Integrated optics materials
(240.6680) Optics at surfaces : Surface plasmons
(260.3090) Physical optics : Infrared, far
(160.3918) Materials : Metamaterials
(250.5403) Optoelectronics : Plasmonics

ToC Category:

Original Manuscript: October 2, 2009
Revised Manuscript: January 26, 2010
Manuscript Accepted: February 2, 2010
Published: March 23, 2010

J. W. Cleary, R. E. Peale, D. J. Shelton, G. D. Boreman, C. W. Smith, M. Ishigami, R. Soref, A. Drehman, and W. R. Buchwald, "IR permittivities for silicides and doped silicon," J. Opt. Soc. Am. B 27, 730-734 (2010)

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