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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Henry van Driel
  • Vol. 27, Iss. 5 — May. 1, 2010
  • pp: 981–989

Optical second-harmonic and reflectance-anisotropy spectroscopy of clean and hydrogen-terminated vicinal Si(001) surfaces

Robert Ehlert, Jinhee Kwon, Loucas Loumakos, Onise Sharia, Alexander A. Demkov, and M. C. Downer  »View Author Affiliations


JOSA B, Vol. 27, Issue 5, pp. 981-989 (2010)
http://dx.doi.org/10.1364/JOSAB.27.000981


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Abstract

Spectroscopic second-harmonic generation (SHG) and reflectance-anisotropy spectroscopy are used to probe a single-domain reconstructed stepped Si(001) surface off cut 6° toward [110] before and after dissociative adsorption of H 2 at the D B step edges. The reflectance-anisotropy spectrum and the first- and third-order Fourier components of the SHG azimuthal anisotropy exhibit broad step-induced resonant peaks near 3.1 eV that are quenched in approximate proportion to H 2 dosage, suggesting that they all share a common origin in the essential electronic resonance of the D B steps. Analysis with a simplified bond-hyperpolarizability model suggests that hydrogen termination redistributes oscillator strength from the chemically active nearly vertical step dangling bond into three underlying bonds, suggesting the latter may be related to the third-order Fourier component of the SHG response.

© 2010 Optical Society of America

OCIS Codes
(240.4350) Optics at surfaces : Nonlinear optics at surfaces
(240.6490) Optics at surfaces : Spectroscopy, surface
(240.5698) Optics at surfaces : Reflectance anisotropy spectroscopy

ToC Category:
Optics at Surfaces

History
Original Manuscript: December 1, 2009
Revised Manuscript: February 18, 2010
Manuscript Accepted: February 22, 2010
Published: April 22, 2010

Citation
Robert Ehlert, Jinhee Kwon, Loucas Loumakos, Onise Sharia, Alexander A. Demkov, and M. C. Downer, "Optical second-harmonic and reflectance-anisotropy spectroscopy of clean and hydrogen-terminated vicinal Si(001) surfaces," J. Opt. Soc. Am. B 27, 981-989 (2010)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-27-5-981


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References

  1. J. H. G. Owen, K. Miki, and D. R. Bowler, “Self-assembled nanowires on semiconductor surfaces,” J. Mater. Sci. 41, 4568–4603 (2006). [CrossRef]
  2. J. V. Barth, G. Costantini, and K. Kern, “Engineering atomic and molecular nanostructures at surfaces,” Nature 437, 671–679 (2005). [CrossRef] [PubMed]
  3. G. P. Lopinski, D. D. M. Wayner, and R. A. Wolkow, “Self-directed growth of molecular nanostructures on silicon,” Nature 406, 48–51 (2000). [CrossRef] [PubMed]
  4. F. J. Himpsel, J. L. McChesney, J. N. Crain, A. Kirakosian, V. Perez-Dieste, N. L. Abbott, Y. Y. Luk, P. F. Nealey, and D. Y. Petrovykh, “Stepped silicon surfaces as templates for one-dimensional nanostructures,” J. Phys. Chem. B 108, 14484–14490 (2004). [CrossRef]
  5. T. C. Shen, C. Wang, and J. R. Tucker, “Al nucleation on monohydride and bare Si(001) surfaces: atomic scale patterning,” Phys. Rev. Lett. 78, 1271–1274 (1997). [CrossRef]
  6. J. F. McGilp, “Optical characterization of semiconductor surfaces and interfaces,” Prog. Surf. Sci. 49, 1–106 (1995). [CrossRef]
  7. Y. R. Shen, “Surface-properties probed by 2nd-harmonic and sum-frequency generation,” Nature 337, 519–525 (1989). [CrossRef]
  8. D. E. Aspnes and A. A. Studna, “Anisotropies in the above band-gap optical-spectra of cubic semiconductors,”Phys. Rev. Lett. 54, 1956–1959 (1985). [CrossRef] [PubMed]
  9. P. Kratzer, E. Pehlke, M. Scheffler, M. B. Raschke, and U. Hofer, “Highly site-specific H2 adsorption on vicinal Si(001) surfaces,” Phys. Rev. Lett. 81, 5596–5599 (1998). [CrossRef]
  10. D. Lim, M. C. Downer, J. G. Ekerdt, N. Arzate, B. S. Mendoza, V. I. Gavrilenko, and R. Q. Wu, “Optical second harmonic spectroscopy of boron-reconstructed Si(001),” Phys. Rev. Lett. 84, 3406–3409 (2000). [CrossRef] [PubMed]
  11. R. Shioda and J. van der Weide, “Reflectance difference spectroscopy of highly oriented (2×1) reconstructed Si(001) surfaces,” Phys. Rev. B 57, R6823–R6825 (1998). [CrossRef]
  12. S. G. Jaloviar, J. L. Lin, F. Liu, V. Zielasek, L. McCaughan, and M. G. Lagally, “Step-induced optical anisotropy of vicinal Si(001),” Phys. Rev. Lett. 82, 791–794 (1999). [CrossRef]
  13. Z. Sobiesierski, D. I. Westwood, and C. C. Matthai, “Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces,” J. Phys. Condens. Matter 10, 1–43 (1998). [CrossRef]
  14. T. Nakayama and M. Murayama, “Atom-scale optical determination of Si-oxide layer thickness during layer-by-layer oxidation: theoretical study,” Appl. Phys. Lett. 77, 4286–4288 (2000). [CrossRef]
  15. W. G. Schmidt, N. Esser, A. M. Frisch, P. Vogt, J. Bernholc, F. Bechstedt, M. Zorn, T. Hannappel, S. Visbeck, F. Willig, and W. Richter, “Understanding reflectance anisotropy: surface-state signatures and bulk-related features in the optical spectrum of InP(001)(2×4),” Phys. Rev. B 61, R16335 (2000). [CrossRef]
  16. W. G. Schmidt, F. Bechstedt, and J. Bernholc, “Terrace and step contributions to the optical anisotropy of Si(001) surfaces,” Phys. Rev. B 63, 045322 (2001). [CrossRef]
  17. J. Kwon, M. C. Downer, and B. S. Mendoza, “Second-harmonic and reflectance-anisotropy spectroscopy of vicinal Si(001)/SiO2 interfaces: experiment and simplified microscopic model,” Phys. Rev. B 73, 195330 (2006). [CrossRef]
  18. G. Lupke, D. J. Bottomley, and H. M. Vandriel, “Second- and third-harmonic generation from cubic centrosymmetric crystals with vicinal faces: phenomenological theory and experiment,” J. Opt. Soc. Am. B 11, 33–44 (1994). [CrossRef]
  19. G. Lupke, “Characterization of semiconductor interfaces by second-harmonic generation,” Surf. Sci. Rep. 35, 75–161 (1999). [CrossRef]
  20. J. Kwon and M. C. Downer, “Reflectance-difference and second-harmonic generation: a meeting of two surface spectroscopies,” Phys. Status Solidi C 0, 3055–3059 (2003). [CrossRef]
  21. G. D. Powell, J. F. Wang, and D. E. Aspnes, “Simplified bond-hyperpolarizability model of second harmonic generation,” Phys. Rev. B 65, 205320 (2002). [CrossRef]
  22. A. A. Demkov and O. F. Sankey, “Growth study and theoretical investigation of the ultrathin oxide SiO2-Si heterojunction,” Phys. Rev. Lett. 83, 2038–2041 (1999). [CrossRef]
  23. D. J. Chadi, “Stabilities of single-layer and bilayer steps on Si(001) surfaces,” Phys. Rev. Lett. 59, 1691–1694 (1987). [CrossRef] [PubMed]
  24. R. A. Wolkow, “Direct observation of an increase in buckled dimers on Si(001) at low-temperature,” Phys. Rev. Lett. 68, 2636–2639 (1992). [CrossRef] [PubMed]
  25. P. E. Wierenga, J. A. Kubby, and J. E. Griffith, “Tunneling images of biatomic steps on Si(001),” Phys. Rev. Lett. 59, 2169–2172 (1987). [CrossRef] [PubMed]
  26. N. Witkowski, R. Coustel, O. Pluchery, and Y. Borensztein, “RAS: an efficient probe to characterize Si(001)-(2×1) surfaces,” Surf. Sci. 600, 5142–5149 (2006). [CrossRef]
  27. W. G. Schmidt, F. Bechstedt, and J. Bernholc, “Understanding reflectance anisotropy: surface-state signatures and bulk-related features,” J. Vac. Sci. Technol. B 18, 2215–2223 (2000). [CrossRef]
  28. K. Hata, T. Kimura, S. Ozawa, and H. Shigekawa, “How to fabricate a defect free Si(001) surface,” J. Vac. Sci. Technol. A 18, 1933–1936 (2000). [CrossRef]
  29. R. Kaplan, “LEED study of the stepped surface of vicinal Si(100),” Surf. Sci. 93, 145–158 (1980). [CrossRef]
  30. L. Mantese, U. Rossow, and D. E. Aspnes, “Surface-induced optical anisotropy of oxidized, clean, and hydrogenated vicinal Si(001) surfaces,” Appl. Surf. Sci. 107, 35–41 (1996). [CrossRef]
  31. Y. Borensztein and N. Witkowski, “Optical response of clean and hydrogen-covered vicinal Si(001)-2×1 surfaces,” J. Phys. Condens. Matter 16, S4301–S4311 (2004). [CrossRef]
  32. W. Daum, H. J. Krause, U. Reichel, and H. Ibach, “Identification of strained silicon layers at Si-SiO2 interfaces and clean Si surfaces by nonlinear optical spectroscopy,” Phys. Rev. Lett. 71, 1234–1237 (1993). [CrossRef] [PubMed]
  33. M. Palummo, N. Witkowski, O. Pluchery, R. D. Sole, and Y. Borensztein, “Reflectance-anisotropy spectroscopy and surface differential reflectance spectra at the Si(100) surface: combined experimental and theoretical study,” Phys. Rev. B 79, 035327 (2009). [CrossRef]
  34. W. Ranke, “Precursor kinetics of dissociative water adsorption on the Si(001) surface,” Surf. Sci. 369, 137–145 (1996). [CrossRef]
  35. M. Nishizawa, T. Yasuda, S. Yamasaki, K. Miki, M. Shinohara, N. Kamakura, Y. Kimura, and M. Niwano, “Origin of type-C defects on the Si(100)-(2×1) surface,” Phys. Rev. B 65, 161302 (2002). [CrossRef]
  36. R. J. Hamers and U. K. Köhler, “Determination of the local electronic structure of atomic-sized defects on Si(001) by tunneling spectroscopy,” J. Vac. Sci. Technol. A 7, 2854–2859 (1989). [CrossRef]
  37. R. C. Miller, “Optical second harmonic generation in piezoelectric crystals,” Appl. Phys. Lett. 5, 17–19 (1964). [CrossRef]
  38. G. Kresse and J. Furthmuller, “Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set,” Comput. Mater. Sci. 6, 15–50 (1996). [CrossRef]
  39. G. Kresse and J. Furthmuller, “Efficient iterative schemes for ab-initio total-energy calculations using a plane-wave basis set,” Phys. Rev. B 54, 11169–11186 (1996). [CrossRef]
  40. G. Kresse and J. Hafner, “Ab-initio molecular-dynamics simulation of the liquid-metal amorphous-semiconductor transition in germanium,” Phys. Rev. B 49, 14251–14269 (1994). [CrossRef]
  41. G. Kresse and J. Hafner, “Ab-initio molecular-dynamics for open-shell transition-metals,” Phys. Rev. B 48, 13115–13118 (1993). [CrossRef]
  42. G. Kresse and J. Hafner, “Ab-initio molecular-dynamics for liquid-metals,” Phys. Rev. B 47, 558–561 (1993). [CrossRef]
  43. G. Kresse and J. Hafner, “Norm-conserving and ultrasoft pseudopotentials for first-row and transition-elements,” J. Phys. Condens. Matter 6, 8245–8257 (1994). [CrossRef]
  44. J. P. Perdew and A. Zunger, “Self-interaction correction to density-functional approximations for many-electron systems,” Phys. Rev. B 23, 5048–5079 (1981). [CrossRef]
  45. Z. Z. Zhu, N. Shima, and M. Tsukada, “Electronic states of Si(100) reconstructed surfaces,” Phys. Rev. B 40, 11868–11879 (1989). [CrossRef]
  46. J. Kwon, “Second-harmonic generation and reflectance-anisotropy spectroscopy of vicinal Si(001),” Ph.D. dissertation (University of Texas at Austin, 2006).

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