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Acceleration of carrier recovery in a quantum well semiconductor optical amplifier due to the tunneling effect |
JOSA B, Vol. 29, Issue 10, pp. 2990-2994 (2012)
http://dx.doi.org/10.1364/JOSAB.29.002990
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Abstract
In this paper, we theoretically demonstrate that carrier recovery can be accelerated through the tunneling effect in a novel (to our knowledge) quantum well (QW) semiconductor optical amplifier. In the active region, we design the repeated element, including a shallow QW and a following deep QW. Through numerical calculation, we find this novel structure is helpful for improving the dynamic characteristics. In the single element, the shallow QW acts as a perfect carrier reservoir, while the deep QW acts as a “real” active region. Gain recovery time is shortened significantly.
© 2012 Optical Society of America
OCIS Codes
(190.4360) Nonlinear optics : Nonlinear optics, devices
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(230.1150) Optical devices : All-optical devices
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
ToC Category:
Nonlinear Optics
History
Original Manuscript: June 15, 2012
Revised Manuscript: August 30, 2012
Manuscript Accepted: September 1, 2012
Published: September 28, 2012
Citation
Xi Huang, Cui Qin, Yu Yu, and Xinliang Zhang, "Acceleration of carrier recovery in a quantum well semiconductor optical amplifier due to the tunneling effect," J. Opt. Soc. Am. B 29, 2990-2994 (2012)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-29-10-2990
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