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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Henry van Driel
  • Vol. 29, Iss. 2 — Feb. 1, 2012
  • pp: A31–A35

Improved antibunching by using high-excitation pulses from a single semiconductor quantum dot—a theoretical study

Matthias Florian, Christopher Gies, Paul Gartner, and Frank Jahnke  »View Author Affiliations

JOSA B, Vol. 29, Issue 2, pp. A31-A35 (2012)

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We study the intensity dependence of single-photon emission from a single semiconductor quantum dot after pulsed excitation. A semiconductor model is introduced that accounts for various configurations resulting from the occupation of the localized single-particle states with carriers. A detailed account is given on how the photon correlation dynamics and the antibunching can be calculated. We predict a novel effect, where, for strong excitation, the formation of multiexciton configurations during the excitation pulse leads to an improved antibunching signature in g(2).

© 2012 Optical Society of America

OCIS Codes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(270.5290) Quantum optics : Photon statistics

Original Manuscript: October 14, 2011
Manuscript Accepted: November 23, 2011
Published: January 25, 2012

Matthias Florian, Christopher Gies, Paul Gartner, and Frank Jahnke, "Improved antibunching by using high-excitation pulses from a single semiconductor quantum dot—a theoretical study," J. Opt. Soc. Am. B 29, A31-A35 (2012)

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