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Improved antibunching by using high-excitation pulses from a single semiconductor quantum dot—a theoretical study |
JOSA B, Vol. 29, Issue 2, pp. A31-A35 (2012)
http://dx.doi.org/10.1364/JOSAB.29.000A31
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Abstract
We study the intensity dependence of single-photon emission from a single semiconductor quantum dot after pulsed excitation. A semiconductor model is introduced that accounts for various configurations resulting from the occupation of the localized single-particle states with carriers. A detailed account is given on how the photon correlation dynamics and the antibunching can be calculated. We predict a novel effect, where, for strong excitation, the formation of multiexciton configurations during the excitation pulse leads to an improved antibunching signature in
© 2012 Optical Society of America
OCIS Codes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(270.5290) Quantum optics : Photon statistics
History
Original Manuscript: October 14, 2011
Manuscript Accepted: November 23, 2011
Published: January 25, 2012
Citation
Matthias Florian, Christopher Gies, Paul Gartner, and Frank Jahnke, "Improved antibunching by using high-excitation pulses from a single semiconductor quantum dot—a theoretical study," J. Opt. Soc. Am. B 29, A31-A35 (2012)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-29-2-A31
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