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Carrier-concentration-dependent resonance frequency shift in a metamaterial loaded semiconductor |
JOSA B, Vol. 29, Issue 8, pp. 2110-2115 (2012)
http://dx.doi.org/10.1364/JOSAB.29.002110
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Abstract
We examined the electromagnetic responses of near-infrared metamaterials consisting of split-ring resonators fabricated on GaInAs semiconductor layers with different doping levels on an InP substrate. The inductance-capacitance (LC) resonances of the split-ring resonators could be controlled entirely from 52 to 63 THz by changing the carrier concentrations from
© 2012 Optical Society of America
OCIS Codes
(130.5990) Integrated optics : Semiconductors
(260.5740) Physical optics : Resonance
(160.3918) Materials : Metamaterials
ToC Category:
Materials
History
Original Manuscript: March 6, 2012
Revised Manuscript: May 30, 2012
Manuscript Accepted: June 21, 2012
Published: July 25, 2012
Citation
Seiji Myoga, Tomohiro Amemiya, Atsushi Ishikawa, Nobuhiko Nishiyama, Takuo Tanaka, and Shigehisa Arai, "Carrier-concentration-dependent resonance frequency shift in a metamaterial loaded semiconductor," J. Opt. Soc. Am. B 29, 2110-2115 (2012)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-29-8-2110
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