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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Henry van Driel
  • Vol. 29, Iss. 8 — Aug. 1, 2012
  • pp: 2110–2115

Carrier-concentration-dependent resonance frequency shift in a metamaterial loaded semiconductor

Seiji Myoga, Tomohiro Amemiya, Atsushi Ishikawa, Nobuhiko Nishiyama, Takuo Tanaka, and Shigehisa Arai  »View Author Affiliations


JOSA B, Vol. 29, Issue 8, pp. 2110-2115 (2012)
http://dx.doi.org/10.1364/JOSAB.29.002110


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Abstract

We examined the electromagnetic responses of near-infrared metamaterials consisting of split-ring resonators fabricated on GaInAs semiconductor layers with different doping levels on an InP substrate. The inductance-capacitance (LC) resonances of the split-ring resonators could be controlled entirely from 52 to 63 THz by changing the carrier concentrations from 2.6×1018 to 2.7×1019  cm−3. Our results show the feasibility of semiconductor-based tunable metamaterials.

© 2012 Optical Society of America

OCIS Codes
(130.5990) Integrated optics : Semiconductors
(260.5740) Physical optics : Resonance
(160.3918) Materials : Metamaterials

ToC Category:
Materials

History
Original Manuscript: March 6, 2012
Revised Manuscript: May 30, 2012
Manuscript Accepted: June 21, 2012
Published: July 25, 2012

Citation
Seiji Myoga, Tomohiro Amemiya, Atsushi Ishikawa, Nobuhiko Nishiyama, Takuo Tanaka, and Shigehisa Arai, "Carrier-concentration-dependent resonance frequency shift in a metamaterial loaded semiconductor," J. Opt. Soc. Am. B 29, 2110-2115 (2012)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-29-8-2110

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