We examined the electromagnetic responses of near-infrared metamaterials consisting of split-ring resonators fabricated on GaInAs semiconductor layers with different doping levels on an InP substrate. The inductance-capacitance (LC) resonances of the split-ring resonators could be controlled entirely from 52 to 63 THz by changing the carrier concentrations from 2.6×1018 to 2.7×1019 cm−3. Our results show the feasibility of semiconductor-based tunable metamaterials.
© 2012 Optical Society of America
Original Manuscript: March 6, 2012
Revised Manuscript: May 30, 2012
Manuscript Accepted: June 21, 2012
Published: July 25, 2012
Seiji Myoga, Tomohiro Amemiya, Atsushi Ishikawa, Nobuhiko Nishiyama, Takuo Tanaka, and Shigehisa Arai, "Carrier-concentration-dependent resonance frequency shift in a metamaterial loaded semiconductor," J. Opt. Soc. Am. B 29, 2110-2115 (2012)