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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Henry van Driel
  • Vol. 29, Iss. 8 — Aug. 1, 2012
  • pp: 2249–2254

Modified relaxation oscillation parameters in optically injected semiconductor lasers

Bryan Kelleher, Stephen P. Hegarty, and Guillaume Huyet  »View Author Affiliations


JOSA B, Vol. 29, Issue 8, pp. 2249-2254 (2012)
http://dx.doi.org/10.1364/JOSAB.29.002249


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Abstract

One of the most significant features in the optically injected laser system is the modification of the damping of the relaxation oscillations. We derive an analytic expression for the nonlinear modification to this important laser parameter and calculate various quantities of interest using the result. In particular, this leads to a novel method to experimentally determine the free-running damping. The variation of the effective damping with detuning also explains the marked detuning dependence of the form of excitable pulsations in optically injected semiconductor lasers.

© 2012 Optical Society of America

OCIS Codes
(140.3520) Lasers and laser optics : Lasers, injection-locked
(140.5960) Lasers and laser optics : Semiconductor lasers
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optoelectronics

History
Original Manuscript: May 4, 2012
Manuscript Accepted: June 20, 2012
Published: August 1, 2012

Citation
Bryan Kelleher, Stephen P. Hegarty, and Guillaume Huyet, "Modified relaxation oscillation parameters in optically injected semiconductor lasers," J. Opt. Soc. Am. B 29, 2249-2254 (2012)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-29-8-2249


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