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Journal of the Optical Society of America B

Journal of the Optical Society of America B

| OPTICAL PHYSICS

  • Editor: Grover Swartzlander
  • Vol. 30, Iss. 10 — Oct. 1, 2013
  • pp: 2758–2764

Interface resonances in optical second-harmonic generation from oxide-covered Ge(111) and Ge(100)

Jens Rafaelsen, Peter K. Kristensen, and Kjeld Pedersen  »View Author Affiliations


JOSA B, Vol. 30, Issue 10, pp. 2758-2764 (2013)
http://dx.doi.org/10.1364/JOSAB.30.002758


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Abstract

Ge surfaces have been investigated with optical second-harmonic generation (SHG) spectroscopy in the range from 1.78 to 3.44 eV. The spectra reveal surface-specific resonances corresponding to the E1 and E1+Δ1 bulk transitions. The splitting between the surface E1 and E1+Δ1 resonances is found to be larger than the bulk value. It is suggested this is caused by surface-induced band bending through a Rashba effect. By probing metal-oxide-semiconductor structures it is found that contributions from electric-field-induced SHG from the space charge region are negligible for Ge within the probed spectral range. Strong second-harmonic resonances in the 2.6–3.2 eV range are observed and tentatively assigned to Ge–Ge bonds at the interface.

© 2013 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(190.4350) Nonlinear optics : Nonlinear optics at surfaces
(240.6490) Optics at surfaces : Spectroscopy, surface
(300.6420) Spectroscopy : Spectroscopy, nonlinear
(240.1485) Optics at surfaces : Buried interfaces

ToC Category:
Spectroscopy

History
Original Manuscript: July 29, 2013
Manuscript Accepted: August 22, 2013
Published: September 30, 2013

Citation
Jens Rafaelsen, Peter K. Kristensen, and Kjeld Pedersen, "Interface resonances in optical second-harmonic generation from oxide-covered Ge(111) and Ge(100)," J. Opt. Soc. Am. B 30, 2758-2764 (2013)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-30-10-2758


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References

  1. R. Soref, “The past, present, and future of silicon photonics,” IEEE J. Sel. Top. Quantum Electron. 12, 1678–1687 (2006). [CrossRef]
  2. S. Thompson, M. Armstrong, C. Auth, M. Alavi, M. Buehler, R. Chau, S. Cea, T. Ghani, G. Glass, T. Hoffman, C.-H. Jan, C. Kenyon, J. Klaus, K. Kuhn, Z. Ma, B. McIntyre, K. Mistry, A. Murthy, B. Obradovic, R. Nagisetty, P. Nguyen, S. Sivakumar, R. Shaheed, L. Shifren, B. Tufts, S. Tyagi, M. Bohr, and Y. El-Mansy, “A 90-nm logic technology featuring strained-silicon,” IEEE Trans. Electron Devices 51, 1790–1797 (2004). [CrossRef]
  3. S. Bergfeld, B. Braunschweig, and W. Daum, “Nonlinear optical spectroscopy of suboxides at oxidized Si(111) interfaces,” Phys. Rev. Lett. 93, 097402 (2004). [CrossRef]
  4. W. Daum, “Optical studies of Si/SiO2 interfaces by second-harmonic generation spectroscopy of silicon interband transitions,” Appl. Phys. A 87, 451–460 (2007). [CrossRef]
  5. T. F. Heinz, C. K. Chen, D. Richard, and Y. R. Shen, “Spectroscopy of molecular monolayers by resonant second-harmonic generation,” Phys. Rev. Lett. 48, 478–481 (1982). [CrossRef]
  6. G. Lüpke, “Characterization of semiconductor interfaces by second-harmonic generation,” Surf. Sci. Rep. 35, 75–161 (1999). [CrossRef]
  7. V. Fomenko, D. Bodlaki, C. Faler, and E. Borguet, “Second-harmonic generation from chemically modified Ge(111) interfaces,” J. Chem. Phys. 116, 6745–6754 (2002). [CrossRef]
  8. D. Bodlaki, H. Yamamoto, D. H. Waldeck, and E. Borguet, “Ambient stability of chemically passivated germanium interfaces,” Surf. Sci. 543, 63–74 (2003). [CrossRef]
  9. K. Schultz, I. Suni, C. Allen, and E. Seebauer, “Optical second harmonic study of Sb adsorption on Ge(111),” Surf. Sci. 276, 40–49 (1992). [CrossRef]
  10. H. Ohashi, H. Sani, and G. Mizutani, “Optical second harmonic spectroscopy of the Ge-oxide/Ge(111) interface,” Jpn. J. Appl. Phys. 40, 6972–6975 (2001). [CrossRef]
  11. H. Ohashi, H. Tanaka, H. Sano, J. Taira, G. Mizutani, and S. Ushioda, “Study of the Ge(111)/GeO2 interface by optical second harmonic spectroscopy,” Surf. Sci. 454–456, 1069–1073 (2000). [CrossRef]
  12. D. Bodlaki, E. Freysz, and E. Borguet, “Infrared second harmonic generation spectroscopy of Ge(111) interfaces,” J. Chem. Phys. 119, 3958–3962 (2003). [CrossRef]
  13. T. V. Dolgova, D. Schuhmacher, G. Marowsky, A. A. Fedyanin, and O. A. Aktsipetrov, “Second-harmonic interferometric spectroscopy of buried interfaces of column IV semiconductors,” Appl. Phys. B 74, 653–659 (2002). [CrossRef]
  14. L. Viña, S. Logothetidis, and M. Cardona, “Temperature dependence of the dielectric function of germanium,” Phys. Rev. B 30, 1979–1991 (1984). [CrossRef]
  15. P. W. Loscutoff and S. F. Bent, “Reactivity of the Germanium surface: chemical passivation and functionalization,” Annu. Rev. Phys. Chem. 57, 467–495 (2006). [CrossRef]
  16. K. Prabhakaran and T. Ogino, “Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study,” Surf. Sci. 325, 263–271 (1995). [CrossRef]
  17. G. W. Anderson, M. C. Hanf, P. R. Norton, Z. H. Lu, and M. J. Graham, “The S-passivation of Ge(100)-1×1,” Appl. Phys. Lett. 66, 1123–1125 (1995). [CrossRef]
  18. P. F. Lyman, O. Sakata, D. L. Marasco, T.-L. Lee, K. D. Breneman, D. T. Keane, and M. J. Bedzyk, “Structure of a passivated Ge surface prepared from aqueous solution,” Surf. Sci. Lett. 462, L594–L598 (2000). [CrossRef]
  19. T. Maeda, S. Takagi, T. Ohnishi, and M. Lippmaa, “Sulfur passivation of Ge (001) surfaces and its effects on Schottky barrier contact,” Mater. Sci. Semicond. Process. 9, 706–710 (2006). [CrossRef]
  20. S. Adachi, “Model dielectric constants of Si and Ge,” Phys. Rev. B 38, 12966–12976 (1988). [CrossRef]
  21. G. Erley and W. Daum, “Silicon interband transitions observed at Si(100)-SiO2 interfaces,” Phys. Rev. B 58, R1734–R1737 (1998). [CrossRef]
  22. T. Suzuki, D. E. Milovzorov, S. Kogo, M. Tsukakoshi, and M. Aono, “Surface second-harmonic generation spectra of Si(111)-7×7 in the 1.0-1.7 ev fundamental photon energy,” Appl. Phys. B 68, 623–627 (1999). [CrossRef]
  23. T. Suzuki, “Surface-state transitions of Si(111)−7×7 probed using nonlinear optical spectroscopy,” Phys. Rev. B 61, R5117–R5120 (2000). [CrossRef]
  24. K. Pedersen, “Second harmonic generation spectroscopy on Si surfaces and interfaces,” Phys. Status Solidi B 247, 2002–2011 (2010). [CrossRef]
  25. B. S. Mendoza, J. Wei, and M. C. Downer, “Blue-shift of E2 critical point resonance in optical second-harmonic spectrum of Si nanocrystals,” Phys. Status Solidi B 249, 1166–1172 (2012). [CrossRef]
  26. J. I. Dadap, X. F. Hu, M. H. Anderson, M. C. Downer, J. K. Lowell, and O. A. Aktsipetrov, “Optical second-harmonic electroreflectance spectroscopy of a Si(001) metal-oxide-semiconductor structure,” Phys. Rev. B 53, R7607–R7609 (1996). [CrossRef]
  27. P. Godefroy, W. de Jong, C. W. van Hasselt, M. A. C. Devillers, and T. Rasing, “Electric field induced second harmonic generation spectroscopy on a metal-oxide-silicon structure,” Appl. Phys. Lett. 68, 1981–1983 (1996). [CrossRef]
  28. A. Rumpel, B. Manschwetus, G. Lilienkamp, H. Schmidt, and W. Daum, “Polarity of space charge fields in second-harmonic generation spectra of Si(100)SiO2 interfaces,” Phys. Rev. B 74, 081303 (2006). [CrossRef]
  29. J. E. Sipe, D. J. Moss, and H. M. van Driel, “Phenomenological theory of optical second- and third-harmonic generation from cubic centrosymmetric crystal,” Phys. Rev. B 35, 1129–1141 (1987). [CrossRef]
  30. J. Rafaelsen and K. Pedersen, are preparing a manuscript tentatively to be called “Strain induced E1 and E1+Δ1 resonance shifts in Ge deposited on Si probed by optical second harmonic generation.”
  31. S. LaShell, B. A. McDougall, and E. Jensen, “Spin splitting of an Au(111) surface state band observed with angle resolved photoelectron spectroscopy,” Phys. Rev. Lett. 77, 3419–3422 (1996). [CrossRef]
  32. M. Nishioka, B. A. Gurney, E. E. Marinero, and F. Mireles, “Zero field spin splitting in AlSb/InAs/AlSb quantum wells induced by surface proximity effects,” Appl. Phys. Lett. 95, 242108 (2009). [CrossRef]
  33. J. F. Binder, P. Broqvist, and A. Pasquarello, “First principles study of substoichiometric germanium oxides,” Microelectron. Eng. 86, 1760–1762 (2009). [CrossRef]
  34. S. W. Robey, C. C. Bahr, Z. Hussain, J. J. Barton, K. T. Leung, and J. Lou, “Surface structure of (2×2) S/Ge(111) determined by angle-resolved photoemission fine structure,” Phys. Rev. B 35, 5657–5665 (1987). [CrossRef]

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