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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Grover Swartzlander
  • Vol. 30, Iss. 10 — Oct. 1, 2013
  • pp: 2758–2764

Interface resonances in optical second-harmonic generation from oxide-covered Ge(111) and Ge(100)

Jens Rafaelsen, Peter K. Kristensen, and Kjeld Pedersen  »View Author Affiliations

JOSA B, Vol. 30, Issue 10, pp. 2758-2764 (2013)

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Ge surfaces have been investigated with optical second-harmonic generation (SHG) spectroscopy in the range from 1.78 to 3.44 eV. The spectra reveal surface-specific resonances corresponding to the E1 and E1+Δ1 bulk transitions. The splitting between the surface E1 and E1+Δ1 resonances is found to be larger than the bulk value. It is suggested this is caused by surface-induced band bending through a Rashba effect. By probing metal-oxide-semiconductor structures it is found that contributions from electric-field-induced SHG from the space charge region are negligible for Ge within the probed spectral range. Strong second-harmonic resonances in the 2.6–3.2 eV range are observed and tentatively assigned to Ge–Ge bonds at the interface.

© 2013 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(190.4350) Nonlinear optics : Nonlinear optics at surfaces
(240.6490) Optics at surfaces : Spectroscopy, surface
(300.6420) Spectroscopy : Spectroscopy, nonlinear
(240.1485) Optics at surfaces : Buried interfaces

ToC Category:

Original Manuscript: July 29, 2013
Manuscript Accepted: August 22, 2013
Published: September 30, 2013

Jens Rafaelsen, Peter K. Kristensen, and Kjeld Pedersen, "Interface resonances in optical second-harmonic generation from oxide-covered Ge(111) and Ge(100)," J. Opt. Soc. Am. B 30, 2758-2764 (2013)

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