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Journal of the Optical Society of America B

Journal of the Optical Society of America B


  • Editor: Grover Swartzlander
  • Vol. 30, Iss. 5 — May. 1, 2013
  • pp: 1141–1147

Laser cooling with rare-earth-doped direct band-gap semiconductors

Galina Nemova and Raman Kashyap  »View Author Affiliations

JOSA B, Vol. 30, Issue 5, pp. 1141-1147 (2013)

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We present a theoretical scheme for laser cooling with the rare-earth-doped direct band-gap semiconductors. We consider ytterbium-doped indium phosphide (Yb3+:InP), in which the cooling process is based on thermal quenching of excited ytterbium ions. The mechanism of cooling in our system consists of laser excitation of ytterbium ions followed by thermal quenching of excited ions accompanied by phonon absorption providing cooling. The band-to-band radiative recombination finalizing the cooling cycle removes energy from the system. This approach to laser cooling of solids permits an increase in the efficiency of the cooling cycle, as well as an acceleration of the cooling process.

© 2013 Optical Society of America

OCIS Codes
(140.3320) Lasers and laser optics : Laser cooling
(140.6810) Lasers and laser optics : Thermal effects
(160.4670) Materials : Optical materials
(160.5690) Materials : Rare-earth-doped materials

ToC Category:
Lasers and Laser Optics

Original Manuscript: December 5, 2012
Revised Manuscript: March 1, 2013
Manuscript Accepted: March 15, 2013
Published: April 10, 2013

Galina Nemova and Raman Kashyap, "Laser cooling with rare-earth-doped direct band-gap semiconductors," J. Opt. Soc. Am. B 30, 1141-1147 (2013)

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