We present theoretical estimates for a low-loss, all-optical transistor using a microresonator device whose fields interact evanescently with rubidium vapor. We use a four-level, electromagnetically induced absorption scheme to couple the light fields of the transistor. We show results indicating that a weak control beam with less than single-photon intensities can switch a much stronger signal beam with switching contrast of greater than 25 dB and loss less than 0.5 dB.
© 2013 Optical Society of America
Original Manuscript: March 7, 2013
Revised Manuscript: March 29, 2013
Manuscript Accepted: March 29, 2013
Published: April 24, 2013
B. D. Clader and S. M. Hendrickson, "Microresonator-based all-optical transistor," J. Opt. Soc. Am. B 30, 1329-1334 (2013)