Model for optical bistability in GaAs/AlGaAs Fabry—Perot étalons including diffraction, carrier diffusion, and heat conduction
JOSA B, Vol. 7, Issue 1, pp. 35-42 (1990)
http://dx.doi.org/10.1364/JOSAB.7.000035
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Abstract
A new model for optical bistability in layered semiconductor Fabry—Perot étalons is presented. The model accounts for diffraction, carrier diffusion, and thermal conduction. Assuming that the spot size and the thickness of the nonlinear layer are smaller than the diffusion length of the carriers, a simplified model is derived that has been used to design bistable AlGaAs étalons with improved thermal properties.
© 1990 Optical Society of America
Citation
Ulf Olin, "Model for optical bistability in GaAs/AlGaAs Fabry—Perot étalons including diffraction, carrier diffusion, and heat conduction," J. Opt. Soc. Am. B 7, 35-42 (1990)
http://www.opticsinfobase.org/josab/abstract.cfm?URI=josab-7-1-35
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